ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

Janik, E.; Sadowski, J.; Dłuźewski, P.; Kret, S.; Baczewski, L. T.; Petroutchik, A.; Łusakowska, E.; Wróbel, J.; Zaleszczyk, W.; Karczewski, G.; Wójtowicz, T.; Presz, A.

doi:10.1063/1.2357334

Cited by 74 publications

(72 citation statements)

References 25 publications

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“…The growth procedure was the following. First, 0.8 µm long ZnTe NWs were grown on (110)-GaAs with the use of a previously established procedure [23]. Then, the Zn flux was stopped, and the Cd flux was supplied.…”

Section: Cdte-based Nanowiresmentioning

confidence: 99%

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MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Wójtowicz¹,

Janik²,

Zaleszczyk³

et al. 2008

J. Korean Phy. Soc.

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We review our results on the growth of ZnTe-and CdTe-based nanowires (NWs) and on their basic structural and optical properties. The nanowires were produced by using molecular beam epitaxy (MBE) with the use of a mechanism of catalytically-enhanced growth. The growth of ZnTe, CdTe, ZnMgTe and ZnMnTe nanowires was performed from elemental Zn, Cd, Mn, Mg and Te sources on the surfaces of (001)-, (110)-and (111)B-oriented GaAs substrates with Au nanocatalysts. The morphological and structural properties of the nanowires were assessed by using X-ray diffractometry, field-emission scanning electron microscopy, and high resolution transmission electron microscopy. Additional studies of the compositions of both the nanowires and the Au-rich nanocatalysts were performed with the use of energy dispersive X-ray spectroscopy. The optical properties of the NWs were assessed by using photoluminescence and Raman-scattering studies performed in both macro and micro modes. The studies revealed that binary and quaternary nanowires with average diameters from 30 to 70 nm and lengths from 1 to 2.6 µm were monocrystalline in their upper parts, their growth axis was 111 , and they grow along the [111] direction of the substrate, independent of the substrate orientation used. A Au-rich (with 20 % Ga) spherical nanocatalyst was always visible at the tip of a nanowire, thus indicating that a vapor-liquid-solid mechanism was responsible for the growth of the ZnTe-and the CdTe-based nanowires. The formation of homogeneous mixed crystal ZnMnTe and ZnMgTe nanowires was demonstrated by measurements of the variation of the lattice constant and by Raman experiments that revealed the expected shift and appearance of new phonon lines and a strong enhancement of the LO-phonon structures for an excitation close to the exciton energy of the NW materials. The photoluminescence from the internal Mn 2+ transition between crystal-field-split energy levels ( 4 T1 → 6 A1) was observed in the ZnMnTe nanowires.

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Section: Cdte-based Nanowiresmentioning

confidence: 99%

“…ZnTe NWs [20] and CdTe NWs [19] have been obtained by using chemical synthesis or CVD methods. Recently, we have reported the first growth of ZnTe NWs by using the MBE technique [23].…”

mentioning

confidence: 99%

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Wójtowicz¹,

Janik²,

Zaleszczyk³

et al. 2008

J. Korean Phy. Soc.

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“…On the other hand, the surface defects, especially surface states, significantly reduce the carrier lifetime affecting the electron transport and optical properties. This causes, for example, a decrease of the near band edge emission (Janik et al, 2006, Skold et.al.,2005, Zaleszczyk et al, 2008. Therefore, a surface passivation is of great importance, especially for ZnTe NWs which oxidize easily.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of the epitaxially grown core–shell ZnTe/ZnMgTe nanowires

Dynowska

Domagała

Romanowski

et al. 2013

Radiation Physics and Chemistry

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We report the method of the epitaxial growth of the core-shell ZnTe/ZnMgTe nanowires.The morphology and the crystal structure of several samples grown in different processes have been studied by scanning electron microscopy, high resolution transmission electron microscopy and X-ray diffraction methods. It was shown that the ZnMgTe shell growth was clearly epitaxial with a good crystal quality. The average lattice spacing of the ZnTe cores and ZnMgTe shells have been calculated and Mg content in the shells has been estimated. It was documented that growing the shell lattice mismatched to the core induces the strain in the core. The model of the strain creation mechanism has been proposed. The presence of a shell with a larger energy gap than that of the core results in a strong emission in the spectral region near the band edge.

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“…The degeneracy of heavy-hole (HH) and light-hole (LH) bulk dispersions at the zone center makes the spin properties of valence-band states especially susceptible to such confinement engineering. 4,5,6,7 Recent advances in fabrication technology 8,9,10,11,12,13,14,15,16 have created opportunities to investigate hole spin physics in semiconductor nanowires made from a range of different materials.In contrast to previous theoretical work 17,18,19,20 on hole spin splitting in quantum wires, we focus here on the influence of the spin-orbit coupling strength on Zeeman splitting of wire-subband edges. A suitable parameter γ quantifying spin-orbit coupling in the valence band can be defined in terms of the effective masses m HH and m LH associated with the HH and LH bands, 21 respectively: 2γ = (m HH − m LH )/ (m HH + m LH ).…”

mentioning

confidence: 99%

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Tailoring hole spin splitting and polarization in nanowires

Csontos

Zülicke

2008

Applied Physics Letters

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Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical study presented here, which has mapped the range of spin-orbit coupling strengths realized in typical semiconductors. Large controllable variations of the g-factor with associated characteristic spin polarization are shown to exist for nanowire subband edges, which therefore turn out to be a versatile laboratory for investigating the complex spin properties exhibited by quantum-confined holes.Engineering spin splitting of charge carriers in semiconductor nanostructures may open up intriguing possibilities for realizing spin-based electronics 1 and quantum information processing. 2 Due to the generally strong dependence of g-factors on band structure, 3 it is expected that spatial confinement will have an important effect on Zeeman splitting when bound-state quantization energies are no longer negligible compared with the separation of bulk-material energy bands. The degeneracy of heavy-hole (HH) and light-hole (LH) bulk dispersions at the zone center makes the spin properties of valence-band states especially susceptible to such confinement engineering. 4,5,6,7 Recent advances in fabrication technology 8,9,10,11,12,13,14,15,16 have created opportunities to investigate hole spin physics in semiconductor nanowires made from a range of different materials.In contrast to previous theoretical work 17,18,19,20 on hole spin splitting in quantum wires, we focus here on the influence of the spin-orbit coupling strength on Zeeman splitting of wire-subband edges. A suitable parameter γ quantifying spin-orbit coupling in the valence band can be defined in terms of the effective masses m HH and m LH associated with the HH and LH bands, 21 respectively: 2γ = (m HH − m LH )/ (m HH + m LH ). Table I lists values for γ in common semiconductors and states its relation to basic bandstructure parameters. 22 A large part of the theoretically possible range 0 ≤ γ ≤ 1/2 is covered by available materials, 23 enabling a detailed study of the interplay between spin-orbit coupling in the valence band and nanowire confinement. Our theoretical investigation reveals surprising qualitative differences in the hole spin properties of nanowires depending on the value of γ, showing that spin splitting (and polarization) of zone-center valence-band edges in nanowires is highly tunable and has a complex materials dependence. A detailed understanding of these properties is vital for proper interpretation of optical and transport measurements as well as for the design of spintronic applications involving p-doped semiconductor nanowires.We use the Luttinger model 22 in the spherical approximation 26 for the top-most bulk valence bands. Including the bulk Zeeman term H Z = −2κµ B BĴ z , the Hamiltonian is given byHere p is the linear orbital momentum,Ĵ the vector of spin-3/2 matrices, m 0 the electron mass in vacuum, γ ...

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ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

Cited by 74 publications

References 25 publications

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Structural characterization of the epitaxially grown core–shell ZnTe/ZnMgTe nanowires

Tailoring hole spin splitting and polarization in nanowires

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