2016
DOI: 10.1149/2.0221609jes
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ZnSe Sensitized and Co-Pi Catalyzed TiO2Nanowire Array Photoanode for Solar-Driven Water Splitting

Abstract: Cobalt-phosphate water oxidation catalysts were successfully deposited onto TiO 2 /ZnSe core/shell nanowire arrays by photo-assisted electrodeposition methods. Photoelectrochemical (PEC) properties of the resulting composite photoanodes were studied for solardriven water splitting under back side illumination in 0.5 M Na 2 SO 3 electrolyte. Compared with pristine TiO 2 and TiO 2 /ZnSe nanowire arrays, the photoconversion efficiency in TiO 2 /ZnSe/Co-Pi composite photoanode was increased by 1.5 and 3.8 times at… Show more

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Cited by 8 publications
(2 citation statements)
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References 46 publications
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“…However, the identical absorption spectrum profiles of the TO/ZCO and TO/ZCO@Co-Pi NHs clearly indicate that the Co-Pi does not take part in the light absorption, as also reported by others. 39,40 The band gap energies of the nanostructures estimated from the Tauc's plot (Figure S3) indicate that the as-prepared anatase TiO 2 NTs is a direct band gap material 41−45 with band gap energy of 3.26 eV, and the band gap energies of TO/ZCO and TO/ZCO@Co-Pi NHs are 3.32 and 3.34 eV, respectively. Moreover, the absorption edges around 2.48, 2.57, and 2.58 eV for pristine TiO 2 NTs, TO/ ZCO NHs, and TO/ZCO@Co-Pi NHs, respectively, can be related to the band tail state, which arises as the midband gap states/defect states form a continuum extending to and overlapping with the conduction band edge.…”
Section: Methodsmentioning
confidence: 99%
“…However, the identical absorption spectrum profiles of the TO/ZCO and TO/ZCO@Co-Pi NHs clearly indicate that the Co-Pi does not take part in the light absorption, as also reported by others. 39,40 The band gap energies of the nanostructures estimated from the Tauc's plot (Figure S3) indicate that the as-prepared anatase TiO 2 NTs is a direct band gap material 41−45 with band gap energy of 3.26 eV, and the band gap energies of TO/ZCO and TO/ZCO@Co-Pi NHs are 3.32 and 3.34 eV, respectively. Moreover, the absorption edges around 2.48, 2.57, and 2.58 eV for pristine TiO 2 NTs, TO/ ZCO NHs, and TO/ZCO@Co-Pi NHs, respectively, can be related to the band tail state, which arises as the midband gap states/defect states form a continuum extending to and overlapping with the conduction band edge.…”
Section: Methodsmentioning
confidence: 99%
“…[57] This issue can be alleviated in semiconductor heterojunction systems, as the built-in electric field at the heterogeneous interface enables efficient charge carrier separation. [91] To this end, many narrow bandgap semiconductors, such as In 2 S 3 (2.1 eV), [57] Cu 2 O (2.17 eV), [53,80] Fe 2 O 3 (2.2 eV), [68] CeO 2 (2.4 eV), [46] CdS (2.42 eV), [70,73,74,92] graphyne (2.65 eV), [69] ZnSe (2.6 eV), [78] C 3 N 4 (2.7 eV) [48,61,79,93] and PbTiO 3 (2.75 eV), [76] have been hybridized with TiO 2 , leading to large enhancements in PEC OER performance.…”
Section: Tio 2 -Based Heterojunction Nanoarraysmentioning
confidence: 99%