ZnSe Electroluminescent Device Exhibiting Switching and Memory

Abstract

An MIS structure, in which the semiconductor is suitably doped ZnSe, exhibits switching and memory properties. The same structure also emits light in both forward and reverse bias with an emission wavelength characteristic of the impurities present. Although the operation of the device is not completely understood the switching can be attributed to a transfer of charge from deep impurities in the semiconductor to the insulating layer.

Dielectric response of poly(vinyl alcohol)–zinc selenide nanocomposite film

“…[5][6][7][8][9][10][11] Suitably doped ZnSe is reported to exhibit switching properties and memory characteristics. 12) The application of ZnSe nanocrystals embedded in poly[(2-methoxy,5-octoxy)-1,4phenylenevinylene] (MOPPV) in designing hybrid photovoltaic devices has been introduced by Yun et al 13) Nitrogen-doped graphene=ZnSe nanocomposites have been reported to have enhanced electrochemical performance and find potential applications in fuel cells, energy storage, and nanodevices. 14) Recently, attention has been focused on the PVA-ZnSe films.…”