ZnRh
                  2
                O
                  4
              :
           A <i>p</i>-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d6 configuration

Mizoguchi, Hiroshi; Hirano, Masahiro; Fujitsu, Satoru; Takeuchi, Tomonari; Ueda, Kazushige; Hosono, Hideo

doi:10.1063/1.1450252

Cited by 106 publications

(80 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A typical example is ZnRh 2 O 4 , which has a normal spinel structure. 46) Similar to the case of ZnO, the Zn 2þ ions in this material are coordinated in tetrahedra, but they are not continuously connected, and thus do not exhibit n-type conductivity. ZnRh 2 O 4 is the only oxide that is known to exhibit p-type conductivity even in the amorphous state, and has been reported to form pn diodes on plastic substrates when combined with TAOSs.…”

Section: Design Of P-type Transparent Oxidementioning

confidence: 98%

Exploring Electro-active Functionality of Transparent Oxide Materials

Hosono

2013

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Ceramics, one of the earliest materials used by humans, have been used since the Stone Age and are also one of the core materials supporting modern society. In this article, I will review the features of transparent oxides, the main components of ceramics, and the progress of research on their electro-active functionalities from the viewpoint of material design. Specifically, the emergence of the functionality of the cement component 12CaO·7Al2O3, the application of transparent oxide semiconductors to thin-film transistors for flat panel displays, and the design of wide-gap p-type semiconductors are introduced along with the progress in their research. In addition, oxide semiconductors are comprehensively discussed on the basis of the band lineup.

show abstract

Section: Design Of P-type Transparent Oxidementioning

confidence: 98%

Exploring Electro-active Functionality of Transparent Oxide Materials

Hosono

2013

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…And lastly, within the class of transparent spinel oxides, p-type semiconducting, wide bandgap, and transparent spinel oxides (e.g., NiCo 2 O 4 , ZnIr 2 O 4 , ZnRh 2 O 4 , etc. [52][53][54][55]) have recently generated great interest in the field of optoelectronic device technology for the possible applications in "Transparent Electronics" [56]. Therefore, these reports have rekindled the interest to study the fundamental physics in spinel oxide systems.…”

Section: Spinel Materialsmentioning

confidence: 99%

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Banerjee¹,

Chattopadhyay

2008

Reactive Sputter Deposition

View full text Add to dashboard Cite

Reactive sputtering is one of the most widely used techniques for preparing compound thin films (such as oxides, nitrides, carbides, etc.) by sputtering metal targets in an active gas atmosphere (Ar + O 2 /N 2 /CH 4 , etc.) [1][2][3][4]. In this chapter, we have discussed, in details, the formation of spinel and delafossite materials of the form AB 2 O 4 and ABO 2 (A and B may be monovalent, divalent, trivalent, or tetravalent cations, depending on the crystal structure, described later) by reactive sputtering technique. Specially, wide bandgap, ptype semiconducting, and transparent oxide materials with delafossite and spinel structure, having interesting applications in "Transparent Electronics," have been discussed in details. In Sects. 12.2-12.5, a detailed review on the structural, optical, and electrical properties of these p-type transparent conducting oxides (p-TCOs), deposited by reactive sputtering technique, has been presented and the origin of p-type conductivity of these materials has been discussed with considerable attention. Most of the results presented in these sections are reported by various authors working on this field. In Sect. 12.6, synthesis and electro-optical characterization of one of the very important delafossite, p-type semiconducting, and wide-bandgap material, such as CuAlO 2 , produced by our group via reactive sputtering technique, have been discussed in details. Detailed discussions on spinel-and delafossitestructured material can be found in various literatures [5][6][7][8][9][10][11][12][13][14]. Also, detailed reviews on the p-TCO materials have been published by us and others [15][16][17], which cover the syntheses and properties of a range of p-TCO materials reported so far.

show abstract

“…Furthermore [24,25] is a crystal with a normal spinel structure and an optical bandgap of 2.1 eV. [26] Rh 3+ ions occupy octahedral sites, and the neighboring octahedra share their edges with each other to form the three-dimensional (3D) lattice. It exhibits p-type electrical conduction with conductivity as large as 1 S cm ±1 .…”

mentioning

confidence: 99%