ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

Borysiewicz, M.; Pasternak, Iwona; Dynowska, E.; Jakieła, R.; Kolkovski, Valery; Dużyńska, Anna; Kamińska, E.; Piotrowska, Anna

doi:10.12693/aphyspola.119.686

Cited by 4 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A voltage around 100V is put between the target and the substrate creating cascade gas ionization (plasma) leading to bombardment of the target surface and ejecting or sputtering away the target material onto all surfaces in the chamber, including the substrate. Usually, thin ZnO films are deposited on unheated substrates, but for higher quality films, substrate heating can be applied around 300-550 • C [79]. The advantage of sputtering lies in the large-scale uniformity, good microstructure, as well as thickness control and repeatability of the deposited films.…”

Section: Thin Filmsmentioning

confidence: 99%

ZnO as a Functional Material, a Review

2019

View full text Add to dashboard Cite

Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.

show abstract

Section: Thin Filmsmentioning

confidence: 99%

ZnO as a Functional Material, a Review

2019

View full text Add to dashboard Cite

show abstract

“…Additionally, we prepared ZnO thin films, deposited by means of RF magnetron sputtering using a 3" 4N-pure ZnO target based on a previously developed approach [11]. However, the analysis of this samples did not depart significantly from those included to this paper.…”

Section: Methodsmentioning

confidence: 99%

Response of ZnO/GaN Heterostructure to Ion Irradiation

et al. 2015

Self Cite

View full text Add to dashboard Cite

In this paper we report on the analysis of Al + -implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al + ions with fluences of 2 × 10 15 and 10 16 at./cm 2 . Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.

show abstract