ZnO-PCBM bilayers as electron transport layers in low-temperature processed perovskite solar cells

Zhang, Jiaqi; Tan, C. L.; Du, Tao; Morbidoni, Maurizio; Lin, Chieh‐Ting; Xu, Shiyu; Durrant, James R.

doi:10.1016/j.scib.2018.02.004

Cited by 36 publications

(18 citation statements)

References 28 publications

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“…Many perovskite photovoltaic cells have exhibited I-V hysteresis behavior, as shown in Figure 4 [36,56,57]. Ion migration is thought to be an origin of the photocurrent hysteresis.…”

Section: Ion Migrationmentioning

confidence: 99%

Perovskite Materials for Resistive Random Access Memories

Zhang¹,

Li²

2020

Perovskite Materials, Devices and Integration

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Resistive random access memory (RRAM) utilizes the resistive switching behavior to store information. Compared to charge-based memory devices, the merits of RRAM devices include multi-bit capability, smaller cell size, and energy per bit (~fJ/bit). In this chapter, we review different perovskite material-based resistive random access memories (RRAMs). We first introduce the history of RRAM development and operational mechanism of conduction, followed by a review of two types of materials with perovskite crystal structure. One is conventional perovskite oxides (PCMO, a-LCMO, etc.), and the other is perovskite halides (organic-inorganic hybrid perovskites and inorganic perovskites) that have recently emerged as novel materials in optoelectronic fields. Our goal is to give a comprehensive review of perovskite-based RRAM materials that can be used for neuromorphic computing and to help further ongoing development in the field.As aforementioned, a basic RRAM device usually consists of two electrodes and an active layer. The top and bottom electrodes can use various materials, including elementary substantial metals (Ag, Cu, Al, Au, Pt, W, etc.) [5], metallic alloys (Pt-Al, Cu-Ti, etc.) [6], and oxides (ITO, SrRuO 3 , Nb:SrTiO 3 , etc.) [7][8][9]. Based on the functions in RS conversion, the electrode materials can be divided into two types. One is active electrodes (Cu, Ag, etc.), which contribute to the RS conversion by the migration and/or redox reaction of the electrode ions around the electrode/active layer junction. The other is inert electrodes (Pt, Au, etc.), which do not directly participate in the RS conversion.As for the active layer, various materials have been utilized in memory devices, such as amorphous metal oxides, polymers, hybrid composites, perovskite oxides, and perovskite halides [10,11]. The material choice of RRAM active layer has significant influence on the device performance. In this chapter, we will mainly introduce oxides and halides with perovskite structures. Perovskite oxides are a conventional active material family for memories. In addition to high-endurance, chemically stable, and high-speed operation, the strong electron correlation induces many unique properties for perovskite oxides, which makes it remain as one of the most promising materials for RRAM yet. Compared with conventional RRAMs, perovskite halides can make flexible devices with low-cost fabrication, compositional flexibility, and excellent optoelectronic properties, enabling the perovskite halides as a promising next-generation memory material family. Next, we will introduce the memory devices with perovskite oxides and halides separately.

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“…Many perovskite photovoltaic cells have exhibited I-V hysteresis behavior, as shown in Figure 4 [36,56,57]. Ion migration is thought to be an origin of the photocurrent hysteresis.…”

Section: Ion Migrationmentioning

confidence: 99%

Perovskite Materials for Resistive Random Access Memories

Zhang¹,

Li²

2020

Perovskite Materials, Devices and Integration

Self Cite

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“…Energetic losses of PSC can be reduced by using low work function ZnO‐PCMB bilayer. It complements to the energy level, thus, carrier extraction is enhanced to the contact electrode . Stability aspect inorganic Cs incorporation in perovskite materials is currently pays immense attention.…”

Section: Quantum Effect: Esc Contextmentioning

confidence: 99%

“…It complements to the energy level, thus, carrier extraction is enhanced to the contact electrode. 167 Stability aspect inorganic Cs incorporation in perovskite materials is currently pays immense attention. The PSC configure via solution-derived NiOx and ZnO nanoparticles employment as HTL and ETL is revealed potential for stability and efficiency.…”

Section: Stability-efficiency Trade-offmentioning

confidence: 99%

Emerging solar cells energy trade-off: Interface engineering materials impact on stability and efficiency progress

Ghosh

Biswas

2018

Int J Energy Res

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Summary Emerging solar cell (ESC) carrier's dynamic transfer difficulties and instability at dissimilar material's interface seems to be potential distress. Electrical permittivity influences on photo carrier dynamics of nonpolarized organic and polarized organic‐inorganic perovskite solar cell. ESC electrical efficiency and stability are consider to be managed broadly by carrier accumulation, extraction, and conduction techniques. Active materials optoelectric interaction and carrier accumulation are petite known. Its energetic dealings with dissimilar interface materials how support to faster carrier extraction and conduction are still in haze. In this drill, focus on active to interface materials key properties are imperative to find a way to promote electrical energy conversion and its steadiness. Selected advanced interface engineering materials (IEMs) architectures, conduction, and multifarious relations to active materials for efficient energy transfer ability and stability are reported precisely by the model. The interface structure consistency supports to systematize energy transfer, otherwise, disorder or energy loss is anticipated. Therefore, active material linkage to IEM photophysical, quantum, and choice of materials technologies are focused comprehensively to explore the pathway of ESC stability and efficiency progression.

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“…Organic-inorganic lead halide perovskites, particularly MAPbX 3 (M = CH 3 NH 3 , X = Cl, Br, I), have caught great attention for their excellent optoelectronic properties such as strong absorption coefficients, easily tunable bandgap, high carrier mobility, small exciton binding energy and unique defect properties [1][2][3][4][5]. These characteristics have boosted rapid progress in solar cell efficiency, which has been improved dramatically from 3.8% to over 23.7% in recent years [6][7][8][9][10][11]. Due to the facile solution processing, high quantum yield and tunable wavelength, lead halide perovskites also have potential for flexible and low-cost optoelectronic devices, such as laser devices, light-emission diodes (LED), and photodetectors, etc [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Controlled fabrication, lasing behavior and excitonic recombination dynamics in single crystal CH3NH3PbBr3 perovskite cuboids

Zhang

et al. 2019

Science Bulletin

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ZnO-PCBM bilayers as electron transport layers in low-temperature processed perovskite solar cells

Cited by 36 publications

References 28 publications

Perovskite Materials for Resistive Random Access Memories

Perovskite Materials for Resistive Random Access Memories

Emerging solar cells energy trade-off: Interface engineering materials impact on stability and efficiency progress

Controlled fabrication, lasing behavior and excitonic recombination dynamics in single crystal CH3NH3PbBr3 perovskite cuboids

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