ZnO Nanowires Synthesized by Vapor Trapping CVD Method

Abstract

A chemical vapor deposition (CVD) process modified with vapor trapping method has been used to synthesize n-type ZnO nanowires with high carrier concentration without incorporating impurity dopants. With this method, a spatial variation of synthesis condition was created and the donors were directly introduced into the nanowires during the synthesis process. Electron microscopy and electrical transport studies show that nanowires having distinct morphologies and electrical properties were obtained at different locations in the CVD system. The vapor trapping method elucidates the effect of synthesis conditions, and provides an approach to control nanowire growth for tailorable device applications.

Photoluminescence and polarized photodetection of single ZnO nanowires

“…ZnO NWs were synthesized by a vapor trapping chemical vapor deposition method. 8 Field emission scanning electron microscopy (FE-SEM) (Figure 1a) showed as synthesized NWs were 30~150 nm in diameter and ~40 µm in length. Transmission electron microscopy (TEM) (Figure 1b) and selective area electron diffraction showed these NWs to be single crystalline and the growth direction to be (001).…”

“…This n-type behavior can be attributed to Zn interstitials and oxygen vacancies generated during the synthesis process. [8][9][10] Furthermore, transconductance is obtained at 0.4 V drain-source bias (V ds ) and shown in the bottom inset of Figure 1c. According to ref.…”

Growth of Ultra-Long ZnO Microtubes Using a Modified Vapor-Solid Setup

“…commonly applied methods to grow 1-D ZnO micro/nanostructures mainly include vapor [17][18][19] and solution-phase approaches [20][21][22][23]. Solution-phase methods have been widely proposed and employed to construct precise morphology due to their low growth temperatures and good potential for scale-up.…”

Novel Synthetic Route for Tungsten Oxide Nanobundles with Controllable Morphologies

“…High quality can be easily obtained with good reproducibility by controlling the CVD parameters [32][33][34]. Therefore, in the present work, we explore a simple, more economical thermal CVD method for large-scale fabrication of WO 3 nanobundles with controllable morphologies on silicon (100) substrates with no additional catalysts.…”