ZnO nanowire lasers

Vanmaekelbergh, Daniël; Vugt, Lambert K. van

doi:10.1039/c1nr00013f

Cited by 229 publications

(175 citation statements)

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“…Due to space and focus constraints, this review does not aim to provide an exhaustive account of the enormous amount of work on nanoscale lasers, for which we refer the reader to excellent prior reviews [4,61,68,70,71,94,132]. With the overall goal of identifying a roadmap toward laser-emitting structures with subwavelength dimensions, we consider only nanowires where at least one dimension is smaller than the effective wavelength of the active material.…”

Section: Introductionmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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Section: Introductionmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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“…For over a decade, zinc oxide (ZnO) has been at the center of significant research efforts, owing to its optical transparency and its potential utilization in a range of opto/electronics including Schottky diodes [1][2][3] , lasers 4 , thin-film transistors (TFTs) 5 and piezoelectric devices. 6 Schottky diodes, in particular, are currently receiving increasing attention due to their potential for application in radio frequency (RF) electronics, optoelectronics and high power electronics but also because they present an interesting platform for material characterization.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

Semple

Rossbauer

Anthopoulos

2016

ACS Appl. Mater. Interfaces

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Much work has been carried out in recent years in fabricating and studying the Schottky contact formed between various metals and the n-type wide bandgap semiconductor zinc oxide (ZnO). In spite of significant progress, reliable formation of such technologically interesting contacts remains a challenge. Here, we report on solution-processed ZnO Schottky diodes based on a coplanar Al/ZnO/Au nano-gap architecture and study the nature of the rectifying contact formed at the ZnO/Au interface. Resultant diodes exhibit excellent operating characteristics, including low-operating voltages (±2.5 V) and exceptionally high current rectification ratios of >10 6 that can be independently tuned via scaling of the nano-gap's width. The barrier height for electron injection responsible for the rectifying behaviour is studied using current-voltage-temperature and capacitance-voltage measurements (C-V) yielding values in the range of 0.54-0.89 eV. C-V measurements also show that electron traps present at the Au/ZnO interface appear to become less significant at higher frequencies, hence making the diodes particularly attractive for high frequency applications. Finally, an alternative method for calculating the Richardson constant is presented yielding a value of 38.9 A cm -2 K -2 which is close to the theoretically predicted value of 32 A cm -2 K -2 . The implications of the obtained results for the use of these coplanar Schottky diodes in radio frequency applications is discussed.2

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“…Since the coupling strength between a photon and an exciton is related to the oscillator strength and the mode volume, a strong exciton-photon coupling is expected in the nanowires. In the exciton-polariton regime, the wavevector (k) is correlated to the energy of the polariton, E(ω, k), 9,11 (1) where ω is the angular frequency, ε (ω) is the dielectric function of the medium, and k is . Thus, the confined photon in a nano-cavity deviated considerably from the classical theory, because the energy of the polariton is closely correlated to ε (ω).…”

Section: Notesmentioning

confidence: 99%

“…6-8 Another property is the quantum mechanical lightmatter interaction between a travelling photon and exciton, [9][10][11] which is much more intense compared to other semiconductors. Moreover, the light-matter interaction is enhanced in nanowires due to the confined mode volume and the enhanced oscillator strength.…”

mentioning

confidence: 99%

“…Moreover, the light-matter interaction is enhanced in nanowires due to the confined mode volume and the enhanced oscillator strength. [6][7][8][9][10][11] Thus, a strong exciton-photon coupling leads to the exciton-polariton in the nanowires, where the optical properties are not only determined by the electronic states but also by the geometries and dimensions.…”

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confidence: 99%

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Strong Light-Matter Interaction in ZnO Nanowires

Sohn¹,

Lee²,

Han³

et al. 2014

Bulletin of the Korean Chemical Society

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Zinc oxide (ZnO) has been investigated for UV/blue emitters and optoelectronics because of its wide band gap energy (3.37 eV).1-3 In addition, several interesting properties are observed in ZnO. First, the large exciton binding energy and oscillator strength result in the primary excitation of the excitons at room temperature.4,5 Second, light is efficiently guided for the photonic confinement in nanowires.6-8 Another property is the quantum mechanical lightmatter interaction between a travelling photon and exciton, [9][10][11] which is much more intense compared to other semiconductors. Moreover, the light-matter interaction is enhanced in nanowires due to the confined mode volume and the enhanced oscillator strength.6-11 Thus, a strong exciton-photon coupling leads to the exciton-polariton in the nanowires, where the optical properties are not only determined by the electronic states but also by the geometries and dimensions.Among the various nanostructures of ZnO, the most extensively investigated are one-dimensional nanowires due to their natural cavity mode and optical gain.1-5 In addition, the active guiding of light takes place in nanowires because the vacuum wavelength of the guided light is longer than the wire diameter. However, the light-matter interaction has not been well understood in the nanowaveguide of ZnO. In this Note, we study the light-matter interaction in ZnO nanowires. The abnormal spectral spacing of Fabry-Pérot-type modes was observed in the isolated single nanowire, which indicated the strong exciton-photon coupling in a nanocavity. The lasing modes became blue-shifted with increase in the excitation intensity, which implied the weakening of the exciton states and thus the reduction of the light-matter interaction. At the high excitation intensity, additional lasing modes were observed in the low energy regime, which was attributed to the formation of electron-hole plasma state and band gap renormalization. The lasing in the electron-hole plasma state was also explained by the light-matter interaction in nanowires.The typical photoluminescence spectrum of ZnO nanowires is presented in the inset of Figure 1(a), which was obtained at the excitation intensity of 10 μJ/cm 2 . The UV peak at 3.25 eV indicated the exciton state emission.1-3 The nearly absent visible emission (2-3 eV) suggested that the defect states were minimized in the nanowires.4,5 The emission spectra of the single nanowire were also obtained as a function of the excitation intensity to investigate the photonic confinement effect. The sharp peak (mode a) was observed at the excitation intensity of 50 μJ/cm 2 (Figure 1(b)), where the bandwidth of the peak was reduced by ~20 times compared to the normal emission band. This narrow band indicated that the lasing threshold was 50 μJ/cm 2 in this nanowire.12,13 With increase in the excitation intensity above the lasing threshold, new sharp peaks (modes b and c) appeared in the lower energy regime, which were attributed ). The lasing modes in the renormalized band gap (mode b a...

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ZnO nanowire lasers

Cited by 229 publications

References 248 publications

Nanowire Lasers

Nanowire Lasers

Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

Strong Light-Matter Interaction in ZnO Nanowires

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