2007
DOI: 10.1002/smll.200600479
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ZnO‐Nanowire‐Inserted GaN/ZnO Heterojunction Light‐Emitting Diodes

Abstract: Out of the blue: Light‐emitting diodes were obtained by fabricating p+‐GaN film/n‐ZnO nanowire array/n+‐ZnO film structures (see figure). Blue electroluminescence (EL) emission was observed from the nanowire‐inserted heterojunction diodes under forward bias. These diodes exhibited improved EL emission and injection current compared to those of film‐based heterojunction diodes.

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Cited by 154 publications
(102 citation statements)
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References 14 publications
(16 reference statements)
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“…More often in LEDs, instead of ZnO homojunctions, heterojunctions of n-ZnO and other p-type materials have been used, of which p-GaN is of particular interest considering it has similar crystallographic and electronic properties to ZnO [11,[367][368][369]. In addition, it has been suggested that the ZnO nanowire/GaN substrate heterojunction has a higher carrier injection efficiency and a higher recombination rate than other junctions [370].…”
Section: Inorganic Heterojunction Ledsmentioning
confidence: 99%
“…More often in LEDs, instead of ZnO homojunctions, heterojunctions of n-ZnO and other p-type materials have been used, of which p-GaN is of particular interest considering it has similar crystallographic and electronic properties to ZnO [11,[367][368][369]. In addition, it has been suggested that the ZnO nanowire/GaN substrate heterojunction has a higher carrier injection efficiency and a higher recombination rate than other junctions [370].…”
Section: Inorganic Heterojunction Ledsmentioning
confidence: 99%
“…The synthesis of aligned ZnO NW arrays has been studied [9,10] during the past several years due to the various potential applications of aligned ZnO NW arrays in light emitting diodes [11][12][13], lasers [14,15], solar cells [16][17][18], nanogenerators [19][20][21] and piezotronics [22,23], etc. Various methods have been reported for synthesizing ZnO NW arrays, mainly including physical vapor phase transport and deposition [24][25][26], metal organic chemical vapor deposition (MOCVD) [27,28] and the low temperature hydrothermal approach [29][30][31]. Nevertheless, the hydrothermal is advantageous when compared to other methods because the growth temperature is suitable for soft substrates like e.g.…”
Section: Introductionmentioning
confidence: 99%
“…Due to the p-type doping problem, many researchers reported on the heterostructures with n-type ZnO grown on p-type materials of Si, GaN, and conducting oxides [27,54,140,141]. Among the possible heterostructures, the structure ZnO/GaN has attracted extensive interest [142][143][144] because device structures such as n-ZnO/pGaN can be readily realized because the lattice mismatch between ZnO and GaN is modest (1.9%) [145]. Another alternative p-type material is Si [146].…”
Section: Hybrid / Heterostructuresmentioning
confidence: 99%