2019
DOI: 10.4028/www.scientific.net/jnanor.60.94
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ZnO Nanowire Field Effect Transistor for Biosensing: A Review

Abstract: The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sen… Show more

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Cited by 17 publications
(16 citation statements)
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“…A more detailed exposition of these different growth techniques can be found in the work of Rong et al [ 35 ]. However, among these techniques, the vapor-liquid-solid technique (VLS) and hydrothermal technique are the most commonly used bottom-up ZnO nanowires growth processes [ 49 ]. These two techniques are discussed below.…”
Section: Zno Structure and Main Growth Techniquesmentioning
confidence: 99%
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“…A more detailed exposition of these different growth techniques can be found in the work of Rong et al [ 35 ]. However, among these techniques, the vapor-liquid-solid technique (VLS) and hydrothermal technique are the most commonly used bottom-up ZnO nanowires growth processes [ 49 ]. These two techniques are discussed below.…”
Section: Zno Structure and Main Growth Techniquesmentioning
confidence: 99%
“…As many reports attribute the origin of these emissions to the presence of defects in the ZnO structure, a brief review of the most common defects in the ZnO lattice must be introduced. Defects in the ZnO structure can be divided into extrinsic and intrinsic levels [ 49 ]. The intrinsic, sometimes called native levels, are oxygen vacancy ( V O ), zinc vacancy ( V Zn ), oxygen interstitial ( O i ), zinc interstitial (Zn i ), oxygen anti-site ( O Zn ), and zinc anti-site (Zn O ) ( Figure 6 a) [ 125 ].…”
Section: Properties Of Znomentioning
confidence: 99%
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“…In the last few decades, semiconducting metal oxide nanoscale materials were the most likely candidates for electronic, optical, biomedical and thermal applications. They were widely used in UV lasers, sensors, field-effect transistors, field emission devices, energy harvesters, light-emitting sources, phonic devices and nanogenerators [ 3 , 4 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. These metal oxide materials include zinc oxide (ZnO), nickel oxide (NiO), titanium oxide (TiO 2 ), copper oxide (CuO), tin oxide (SnO 2 ), iron oxide (Fe 2 O 3 ), indium oxide (In 2 O 3 ), tungsten trioxide (WO 3 ) and vanadium oxide (V 2 O 3 ) [ 1 , 4 , 14 , 17 , 19 , 23 , 24 , 25 , 26 , 27 , 28 ].…”
Section: Introductionmentioning
confidence: 99%
“…Possessing wide band gap (~ 3.37 eV), large exciton binding energy (~ 60 meV), non-central symmetric wurtzite crystal structure (a = 0.3249 nm, c = 0.5205 nm), and biocompatibility, zinc oxide (ZnO) has been one of the most versatile metal oxide materials [1,2]. ZnO and its microand nanostructures have accordingly enabled many diverse functional devices covering electronics, photonics, transducers, bioengineering, and so on [3][4][5][6][7][8]. While a variety of nanoscale configurations are available for ZnO, one-dimensional (1D) nanowires (NWs) may be particularly useful and available for most of the practical applications because of their structural simplicity and growth controllability [2,[9][10][11].…”
Section: Introductionmentioning
confidence: 99%