ZnO nanowire and mesowire for logic inverter fabrication

Lee, Young Tack; Im, Seongil; Ha, Ryong; Choi, Heon Jin

doi:10.1063/1.3492837

Cited by 19 publications

(22 citation statements)

References 20 publications

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“…[40] The grown ZnO NWs were several tens of micrometers in length and ≈100 nm in diameter. Details about the synthesis of ZnO NWs are described elsewhere.…”

Section: Methodsmentioning

confidence: 99%

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Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Lee

Jeon

Han

et al. 2017

Adv Funct Materials

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101

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2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)-2D WSe 2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoropolymer passivation, the ZnO-WSe 2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 10 6 and an ideality factor of 3.4-3.6 due to the carbon-fluorine (CF) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO-WSe 2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D-2D hybrid vdW heterojunction. This approach using a 1D ZnO-2D WSe 2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.transition metal dichalcogenides of MoS 2 , MoTe 2 , and WSe 2 , post-transition metal dichalcogenides of SnS 2 and SnSe 2 , and black phosphorus (BP), have been synthesized; furthermore, their prototype electronic/optoelectronic applications have been demonstrated for field-effect transistors, [3][4][5][6][7][8][9] logic circuits, [8,[10][11][12][13] light-emitting diodes, [14,15] phototransistors, [16][17][18][19][20] and photodiodes. [21][22][23][24] While there has been great progress in the field of 2D vdW materials, challenges have yet to be resolved for realizing their full potential:(1) implementation of high-speed operation to replace silicon or III-V compound semiconductors, (2) control of carrier type and concentration by doping, and (3) development of high quality all 2D vdW heterostructures over large areas.Recently, Jariwala et al. introduced mixed-dimensional vdW heterostructures, which are a very promising strategy for overcoming the limitations of electronics based on 2D vdW materials. [25] Of the many unique physical properties of 2D vdW materials, the nature of danglingbond-free surfaces enables integration of differently dimensioned materials, such as 0D quantum dot (QD), 1D nanowire (NW), or 3D film or bulk, into mixeddimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale

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“…[40] The grown ZnO NWs were several tens of micrometers in length and ≈100 nm in diameter. Details about the synthesis of ZnO NWs are described elsewhere.…”

Section: Methodsmentioning

confidence: 99%

“…Details about the synthesis of ZnO NWs are described elsewhere. [40] The grown ZnO NWs were several tens of micrometers in length and ≈100 nm in diameter. The as-grown ZnO NWs were transferred from a sapphire substrate to a 285 nm thick SiO 2 /p + -Si substrate by using the drop-and-dry method with isopropyl alcohol solvent.…”

Section: Methodsmentioning

confidence: 99%

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Lee

Jeon

Han

et al. 2017

Adv Funct Materials

Self Cite

101

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“…The ZnO NWs had been synthesized by carbon-thermal reduction method on sapphire substrate. [ 41 ] These NWs were cut off from sapphire substrate and dispersed into the isopropyl alcohol to make dispersion solution. To dispose the NWs on the substrate, the dispersion solution containing NWs was dropped and dried on the surface of oxygen plasma-treated substrate.…”

Section: Methodsmentioning

confidence: 99%

“…According to SEM images of Figure 5 a,b (and their insets), the diameter/or thickness difference is slightly noticed between 200 and 150 nm ZnO nanowires, although they are covered by dielectric and electrode in FETs. Since it is reported that reducing the ZnO nanowire diameter decreases the channel current and moves the threshold voltage of FET toward positive direction as well, [ 40,41 ] we prepared this set of h-CMOS inverter expecting a positive transition voltage from the device, which contains an enhanced-mode n-channel ZnO FET. Supporting Information Figure S4 nanosheet WSe 2 .…”

Section: Doi: 101002/adma201403992mentioning

confidence: 99%

High‐Gain Subnanowatt Power Consumption Hybrid Complementary Logic Inverter with WSe₂ Nanosheet and ZnO Nanowire Transistors on Glass

et al. 2014

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“…[1][2][3] Among the numerous oxide semiconductors, ZnO has been widely used as channel layer in TFTs in recent years, [4][5][6] owing to its simple composition and expeditious fabrication. In order to accumulate a sufficient number of charges in the TFTs channel, the use of high-dielectric constant (k) materials is suggested, which leads to a reduction in the operating voltage.…”

mentioning

confidence: 99%

Improvement of Mobility in ZnO Thin Film Transistor with an Oxygen Enriched MgO Gate Dielectric

Chen

Jeng

Chen

2012

ECS Solid State Letters

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The performance of bottom-gate ZnO thin film transistors (TFTs) using MgO gate dielectrics evaporated with and without introducing oxygen have been investigated. The oxygen introduced during MgO deposition improves the field-effect mobility significantly as compared to the device without introducing oxygen during MgO deposition. The oxygen-introduced MgO exhibits a dielectric constant of 10.9 and the field-effect mobility of the TFT device is enhanced to 78.3 cm 2 /V s. The threshold voltages can also be related to whether the oxygen is introduced into MgO or not. The interface between oxygen-introduced MgO and ZnO is examined and its connection with mobility enhancement is discussed. © 2012 The Electrochemical Society. [DOI: 10.1149/2.003205ssl] All rights reserved. Oxide semiconductor-based thin film transistors (TFTs) as a replacement for conventional Si-based TFTs in electrical and optical devices have been extensively studied due to their excellent optical and electrical properties.1-3 Among the numerous oxide semiconductors, ZnO has been widely used as channel layer in TFTs in recent years, 4-6 owing to its simple composition and expeditious fabrication. In order to accumulate a sufficient number of charges in the TFTs channel, the use of high-dielectric constant (k) materials is suggested, which leads to a reduction in the operating voltage.7-9 Magnesium oxide (MgO) is a candidate of high-k gate dielectrics (k = 9.4∼9.8) 10,11 because of its good isolation 10,12 and chemically inert properties. In addition, MgO films can sustain the plasma damage effectively because it is well-known as an excellent protecting layer of a plasma display panel (PDP) from erosion by plasma ion bombardment. 13,14 Many researches indicate that MgO can play a significant role in controlling the polarity of ZnO film.15-17 Additionally, TFT device parameter such as field effect mobility is mostly related to the crystallinity and defect density of the channel materials. In general, MgO films can possess a large number of excess oxygen ions. 18 In this work we attempted to utilize these excess oxygen ions to compensate for the defect density, such as oxygen vacancies in the channel material. Therefore, MgO thin films that served as gate dielectric in ZnObased TFTs were prepared with and without introducing oxygen by electron beam evaporation. The material and electrical characteristics of the MgO gate dielectrics for the ZnO-based TFTs are investigated to explore the function of the MgO dielectric.The bottom-gate, top contact TFT devices were fabricated on glass substrates. Prior to the MgO deposition, an Al gate electrode was first deposited by electron beam evaporation onto a glass substrate through a shadow mask. MgO films were then deposited with a thickness of 180 nm by electron beam evaporation from the MgO slugs (Kurt J. Lesker, 99.99% purity) with and without introduction of an O 2 gas flow of 50 sccm. The ZnO active layer of a 30 nm thick was deposited on the MgO dielectric by sputtering from a ZnO target (Elecmat, 99.995% ...

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ZnO nanowire and mesowire for logic inverter fabrication

Cited by 19 publications

References 20 publications

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

High‐Gain Subnanowatt Power Consumption Hybrid Complementary Logic Inverter with WSe₂ Nanosheet and ZnO Nanowire Transistors on Glass

Improvement of Mobility in ZnO Thin Film Transistor with an Oxygen Enriched MgO Gate Dielectric

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ZnO nanowire and mesowire for logic inverter fabrication

Cited by 19 publications

References 20 publications

Mixed‐Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

Mixed‐Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

High‐Gain Subnanowatt Power Consumption Hybrid Complementary Logic Inverter with WSe2 Nanosheet and ZnO Nanowire Transistors on Glass

Improvement of Mobility in ZnO Thin Film Transistor with an Oxygen Enriched MgO Gate Dielectric

Contact Info

Product

Resources

About

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

High‐Gain Subnanowatt Power Consumption Hybrid Complementary Logic Inverter with WSe₂ Nanosheet and ZnO Nanowire Transistors on Glass