ZnO nanostructure thin films by continuous spray pyrolysis using doped precursor for Si solar cell application

Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries

“…All samples exhibit a common XRD peak at around 51°, which originates from the Si substrate. 44 Among the 10 nm ZnO diffraction peaks, 2 θ angles of 31.9°, 34.4°, and 36.4° corresponded to the (100), (002), and (101) planes of ZnO (ICSD 31052), implying that the ZnO films were strongly oriented in the Z -axis direction. The obtained XRD diffraction peaks agreed well with the standard diffraction peaks of ZnO.…”

“…When the sample is placed at a high temperature, sufficient diffusion activation energy is obtained to penetrate the lattice point, and grains with low surface energies merge with neighborhood grains and grow large in size. All samples exhibit a common XRD peak at around 51°, which originates from the Si substrate 44. Among the 10 nm ZnO diffraction peaks, 2θ angles of 31.9°, 34.4°, and 36.4°corresponded to the (100), (002), and (101) planes of ZnO (ICSD 31052), implying that the ZnO films were strongly oriented in the Z-axis direction.…”

Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

“…In this case, doping can be achieved by simply including an additional doping precursor within the synthesis solution, such as aluminum chloride, tin chloride and silver nitrate. This approach was explored to successfully dope porous ZnO with various elements, including Al [67,68], Sn [69], Ag [70], Na [71], Mg [72] and many others [73,74]. Similarly to pristine ZnO, the resulting doped structures were found to be highly promising in view of gas sensors fabrication, especially for ammonia and H 2 S detection.…”