2024 Help me understand this report
Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries
Abstract: The effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices were investigated. The annealed active ZnO layer between the top Pd electrode and the HfO2...
Search citation statements
Paper Sections
Select...
Citation Types
0
0
0
Year Published
2024
2024
Publication Types
Select...
1
Relationship
0
1
Authors
Journals
Cited by 1 publication
References 60 publications
0
0
0
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
