ZnO/CdTe heterojunctions prepared by r.f. sputtering

Mancini, A. M.; Pierini, P.; Valentini, A.; Vasanelli, L.; Quirini, A.

doi:10.1016/0040-6090(85)90032-x

Cited by 26 publications

(4 citation statements)

References 21 publications

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“…2), indicating the effect of a series resistance. A simple series resistance model I = I S exp qV −I R S nkT can be applied in an attempt to linearize the characteristics [23].…”

Section: -V Measurementmentioning

confidence: 99%

Characterization of n-ZnO/p-Si films grown by magnetron sputtering

Chaabouni

Abaab

Rezig

2006

Superlattices and Microstructures

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“…2), indicating the effect of a series resistance. A simple series resistance model I = I S exp qV −I R S nkT can be applied in an attempt to linearize the characteristics [23].…”

Section: -V Measurementmentioning

confidence: 99%

Characterization of n-ZnO/p-Si films grown by magnetron sputtering

Chaabouni

Abaab

Rezig

2006

Superlattices and Microstructures

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“…The change of the distribution of ionized acceptors results in the change of the width of space charge region and the shape of potential barrier. Coefficient α is known to be dependent on the shape of potential barrier; coefficient B is proportional to the density of interface states [4,[16][17][18]. Since interface states, usually, create both shallow and deep levels within band gap [19][20][21][22][23], the charge state of heterojunction interface, as well as coefficients α and B, should be light (wavelength and intensity) dependent as is in fact seen (figures 3 and 5).…”

Section: Resultsmentioning

confidence: 85%

Light-dependentI–Vcharacteristics of TiO₂/CdTe heterojunction solar cells

Брус¹,

Ілащук²,

Kovalyuk³

et al. 2012

Semicond. Sci. Technol.

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A new approach was proposed for the analysis of light current-voltage (I-V) characteristics of nonideal heterjunctions in the case of the dominating current transport mechanisms induced by multistep tunnel-recombination processes via interface states. I-V characteristics of the anisotype abrupt heterojunction n-TiO 2 /p-CdTe were investigated under different light conditions. The values of the series R s and shunt R sh resistance, as well as those of the coefficients α and B, which quantitatively describe the dominating tunnel-recombination current transport mechanism, were established to be strongly dependent on light conditions.

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“…A constancy of the factor A for the present device agrees with that concluded for other ones. The latter include: ZnO/CdTe [21], a-Si:H/pSi [22] and Cd/CdTe [23]. However, other works showed a dependence of A on temperature, as in the two cases of aSi:H/p-Si [24][25][26], a-Si 1−x C x :H/c-Si [27,28] as well as for a-SiC/p-Si [29,30].…”

Section: Low Forward J -V Characteristicsmentioning

confidence: 97%

Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100)

Kotkata

Mansour

2012

Appl. Phys. A

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Amorphous (a-) Se 0.82 In 0.18 thin films have been deposited onto n-type silicon (n-Si) single crystal, using the three-temperature technique, in the fabricated configuration of Au/a-Se 0.82 In 0.18 /n-Si/Al. The current densityvoltage (J -V ) characteristics have been measured at different isotherms in the range of 198-313 K, thus inspecting the conduction mechanisms comparing with Au/a-Se/nSi/Al heterojunctions. The analysis proved that the forward bias is characterized by two parts: current increasing exponentially with the applied voltage (low voltage bias region, V < 0.2 V), and non-exponentially in the higher voltage region (V > 0.2 V). At the low bias region, the current was dominated by a multi-tunneling capture-emission process with a rather temperature-independent effect in the temperature range investigated. However, at the high voltage region, the effect of temperature becomes more pronounced with an ohmic character in the range of 198 to 273 K. For temperatures higher than 273 K, and below the glass transition temperature of a-Se 0.82 In 0.18 (T g ∼ 330 K), the high voltage region could be subdivided into two parts: an ohmic conduction range that limited at bias voltage of 0.20 V < V < 0.46 V, and a space charge limited current region for bias voltage of V > 0.46 V. The reverse J -V characteristics showed a deviation from that of the ideal diode behavior, analogous to that of pure a-Se/n-Si heterojunctions.

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ZnO/CdTe heterojunctions prepared by r.f. sputtering

Cited by 26 publications

References 21 publications

Characterization of n-ZnO/p-Si films grown by magnetron sputtering

Characterization of n-ZnO/p-Si films grown by magnetron sputtering

Light-dependentI–Vcharacteristics of TiO₂/CdTe heterojunction solar cells

Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100)

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ZnO/CdTe heterojunctions prepared by r.f. sputtering

Cited by 26 publications

References 21 publications

Characterization of n-ZnO/p-Si films grown by magnetron sputtering

Characterization of n-ZnO/p-Si films grown by magnetron sputtering

Light-dependentI–Vcharacteristics of TiO2/CdTe heterojunction solar cells

Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100)

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Light-dependentI–Vcharacteristics of TiO₂/CdTe heterojunction solar cells