Superlattices and Microstructures volume 39, issue 1-4, P171-178 2006 DOI: 10.1016/j.spmi.2005.08.070 View full text
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F. Chaabouni, M. Abaab, B. Rezig

Abstract: ZnO films were deposited by RF magnetron sputtering on single p-Si substrates to form n-ZnO/ p-Si heterojunctions. Various substrate temperatures of 25, 100, 200, 300 and 400 • C were used.The electrical junction properties were characterized by current-voltage (I -V ) and capacitance-voltage (C-V ) methods.Calculations of the barrier height from classical 1/C 2 -V characterizations and from the I -V in dark conditions indicate merely the same values of 0.7 eV.Moreover, the optical spectra showed that the ref…

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