Zno-based thin films synthesized by atmospheric pressure mist chemical vapor deposition

Lü, Jianguo; Kawaharamura, Toshiyuki; Nishinaka, Hiroyuki; Kamada, Y.; Ohshima, Tamiko; Fujita, Shizυo

doi:10.1016/j.jcrysgro.2006.10.251

Cited by 165 publications

(104 citation statements)

References 54 publications

(96 reference statements)

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“…Because of its outstanding properties and many types of distinctive nanostructures, ZnO is considered as a promising material for various applications including light emitting diodes, ultraviolet photodetectors, transparent conductive layers, and gas sensors [1][2][3][4]. A wide range of techniques such as hydrothermal method, chemical vapor deposition (CVD), reactive plasma deposition (RPD), and aqueous solution based methods are used to synthesize ZnO [5][6][7][8][9]. For example, large ZnO single crystals are grown by hydrothermal method.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of ZnO Irradiated with Hydrogen Plasma

Abe

Hata

2016

Trans. Mat. Res. Soc. Japan

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The influence of intrinsic defects and hydrogen-defect complexes on the properties of n-type ZnO crystals has been studied in terms of annealing and hydrogen plasma irradiation. Electrical and optical properties have been found to be dependent on annealing conditions and hydrogen plasma irradiation. When an as-polished sample was annealed in Ar atmosphere containing Zn vapor at 800°C for 2 h, the color of the sample changed into orange because of the formation of oxygen vacancies (VO). In spite of the VO formation, Hall mobility of the sample increased from 162 to 210 cm 2 V −1 s −1. Carrier concentration also increased by about four orders of magnitude. The simultaneous increases in carrier concentration and Hall mobility indicate that zinc vacancy (VZn) concentration, which acts as a compensation acceptor, are decreased by supplying Zn vapor during the annealing. Hydrogen plasma irradiation did not affect electrical properties of the sample annealed in Ar atmosphere containing Zn vapor, but improved those of the sample annealed in pure Ar atmosphere. The carrier concentration and Hall mobility increased by hydrogen plasma irradiation decreased with increasing post-annealing temperature. The post-annealing temperature dependence suggests that VZn passivated by hydrogen starts to dissociate at temperatures around 400°C.

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Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of ZnO Irradiated with Hydrogen Plasma

Abe

Hata

2016

Trans. Mat. Res. Soc. Japan

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“…Although ZnO has lots of excellent properties, the abundance of defects in ZnO is an impediment for wide application [2]. Nowadays, there are many different methods to prepare ZnO, such as magnetron sputtering [3], sol-gel coating [4], chemical vapor deposition (CVD) [5], pulsed laser deposition (PLD) [6] and spray pyrolysis [7].To achieve high quality ZnO thin films, we use pulsed laser deposition which have advantage of simple operation, low substrate temperature and good consistency of film and target composition.…”

Section: Introductionmentioning

confidence: 99%

Structural, Surface Morphology and Optical Properties of Pulsed Laser Deposited ZnO Thin Films at Various Laser Pulse Energies

Huang¹,

Qin²,

Shen³

et al. 2015

Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering

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Abstract. ZnO thin films have been deposited on ITO substrates by pulsed laser deposition at various laser pulse energies. The crystalline structure, surface morphology and optical properties of ZnO thin films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and UV-Visible measurements. The results showed that ZnO thin films grew along with (002) preferential orientation and had optimal crystalline quality when laser pulse energy kept in 180mJ·P -1 . In addition, the films had smooth surface and compacted structure. Laser pulse energy had little influence on the transmittance of ZnO thin films in visible light region and the transmittance of all the ZnO thin films is above 80%. It also can be found that the film thickness and optical band gap increased with the increase of laser pulse energy from 150mJ·P -1 to 200mJ·P -1 .

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“…Different from these manufacture techniques, mist deposition has outstanding potential for the development of film with some advantages such as easy and atmospheric operation, simple structure, cheapness etc [14]. A film can be efficiently obtained with rapid deposition rate on large area, even rough and diverse substrate such as polymer, silicon, glass and metal.…”

Section: Introductionmentioning

confidence: 99%

Surface Texturing of TiO2 Film by Mist Deposition of TiO2 Nanoparticles

Qin

Watanabe

2013

Nano-Micro Lett.

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Unique and various microstructures of titanium oxide (TiO2) film including macroporous structure, chromatic veins and rings, have been easily fabricated by mist deposition method on silicon substrate with mild preparation conditions. Rutile phase TiO2 nanoparticles were directly used as starting material to prepare film and led to a simple preparation process. It was found that several different microstructures existed in the sample and changed with the varied positions from the center to the edge of the film when the concentration of the TiO2 suspension is 0.06 mol/l, the deposition time is 30 min, the flow rate is 1 l/min and the temperature is 150℃. The surface texturing shows apparent distinction as the concentration of the TiO2 suspension decreased to 0.03 mol/l and 0.01 mol/l.

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Zno-based thin films synthesized by atmospheric pressure mist chemical vapor deposition

Cited by 165 publications

References 54 publications

Electrical and Optical Properties of ZnO Irradiated with Hydrogen Plasma

Electrical and Optical Properties of ZnO Irradiated with Hydrogen Plasma

Structural, Surface Morphology and Optical Properties of Pulsed Laser Deposited ZnO Thin Films at Various Laser Pulse Energies

Surface Texturing of TiO2 Film by Mist Deposition of TiO2 Nanoparticles

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