ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)

Nowak, Ewelina; Chłopocka, Edyta; Szybowicz, Mirosław

doi:10.3390/cryst13030416

Cited by 12 publications

(7 citation statements)

References 158 publications

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“…The results obtained from this study of resistive switching parameters correlate well with the results presented in [ 74 ], which present ZnO-based RRAM devices fabricated by pulsed laser deposition methods.…”

Section: Resultssupporting

confidence: 88%

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

Tominov,

Vakulov,

Avilov

et al. 2023

Nanomaterials

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This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, USET, and ILRS are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10−10 A to (4.2 ± 0.6) × 10−9 A, respectively. Furthermore, the HRS/LRS ratio and USET are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.

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Section: Resultssupporting

confidence: 88%

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

Tominov,

Vakulov,

Avilov

et al. 2023

Nanomaterials

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“…Metal oxides such as TiO x , [8,9,[40][41][42] NiO x , [32,[43][44][45][46] HfO 2 , [19,29,42] TaO x , [20,47,48] AlO x , [10,49] ZrO 2 , [15][16][17] ZnO x , [11,31,50] CuO, [6,51,52] SiO x , [18,34,53] and others are frequently used as materials for constructing the resistive layer due to their simple structure, larger bandgap, and better compatibility with the CMOS process. [54,55] At the same time, nitride such as AlN, [56,57] ZrN, [58] NiN, [59] and organic materials like Alq 3 [60] exhibit similar RS mechanisms to metal oxides, making them viable options for resistive materials.…”

Section: Resistive Layer Materialsmentioning

confidence: 99%

“…However, due to the presence of an unfilled d-electron shell in transition metals, transition metal oxides like ZnO, CuO, and Cu 2 O exhibit significantly wide bandgaps. [50][51][52]72,73] Similarly, materials such as MgO, Al 2 O 3 , and Ga 2 O 3 , which possess ultrawide bandgaps, are commonly used as resistive materials in RRAM applications. [74][75][76][77][78][79]…”

Section: Resistive Layer Materials With a Certain Bandgapmentioning

confidence: 99%

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

Pan,

He,

et al. 2023

Physica Status Solidi (a)

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Resistive random access memory (RRAM) has emerged as a competitive candidate for non‐volatile memory due to its high speed, low power consumption, simple structure, strong scalability and CMOS compatibility. In this paper, an overview of the electrodes and resistive layers is first discussed according to the material properties and structure of RRAM. Then, recent advances in the resistive mechanisms of RRAM are comprehensively discussed and evaluated based on experimental research results and fundamental physics principles. Then, the electrochemical metallization mechanism and the valence change metallization mechanism are thoroughly studied, as well as the formation, fracture and resistance state change behavior of conductive filaments in RRAM based on the ion motion type. Then, various electron transport‐dominated resistance mechanisms are reviewed, and electron transport and resistance switching in the space‐charge‐limited current mode are thoroughly examined using energy band theory. As a result, a theoretical reference is provided for the development of nano‐thin film devices.This article is protected by copyright. All rights reserved.

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“…However, there are some drawbacks to the photocatalytic dye degradation of Rh-B, such as a low photocatalytic efficiency and the need of a long reaction time. Titanium dioxide (TiO 2 ) and zinc oxide (ZnO) nanoparticles have been extensively studied for their photocatalytic activity in the degradation of organic pollutants in water [18][19][20]. These metal oxides, however, have also shown some limitations, including the requirement for UV light to activate their photocatalytic activity and the rapid recombination of electron-hole pairs, which reduces their photocatalytic efficiency [21].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterizations of Fe-Doped NiO Nanoparticles and Their Potential Photocatalytic Dye Degradation Activities

Minisha,

Johnson,

Mohammad Wabaidur

et al. 2023

Sustainability

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Recently, the preparation of smart multifunctional hybrid nanoparticles has captured significant interest in versatile areas, including medicine, environment, and food, due to their enhanced physicochemical properties. The present study focuses on the synthesis of Fe-doped NiO nanoparticles by the coprecipitation method using the sources of nickel (II) acetate tetrahydrate and iron (III) nitrate nonahydrate. The prepared Fe-doped NiO nanoparticles are characterized by X-ray diffraction, Fourier transform infrared spectroscopy, UV–visible spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and X-ray photon spectroscopic analysis. The XRD results clearly confirm the face-centered cubic structure and polycrystalline nature of the synthesized Fe-NiO nanoparticles. The Tauc plot analysis revealed that the bandgap energy of the Fe-doped NiO nanoparticles decreased with the increasing concentration of the Fe dopant from 2% to 8%. The XPS analysis of the samples exhibited the existence of elements, including Fe, Ni, and O, with the absence of any surplus compounds. The FE-SEM and TEM analyses proved the formation of nanostructured Fe-NiO with few spherical and mostly unevenly shaped particles. Further, the photocatalytic efficiency of the prepared Fe-doped NiO nanoparticles were identified by using the cationic dye rhodamine B (Rh-B). The photocatalytic results proved the 8% of Fe doped with NiO nanoparticles achieved 99% of Rh-B degradation within 40 min of visible-light irradiation. Hence, the results of the present study exemplified the Fe-doped NiO nanoparticles have acted as a noticeable photocatalyst to degrade the Rh-B dye.

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ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)

Cited by 12 publications

References 158 publications

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

Synthesis and Characterizations of Fe-Doped NiO Nanoparticles and Their Potential Photocatalytic Dye Degradation Activities

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