Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

Abstract

Resistive random access memory (RRAM) has emerged as a competitive candidate for non‐volatile memory due to its high speed, low power consumption, simple structure, strong scalability and CMOS compatibility. In this paper, an overview of the electrodes and resistive layers is first discussed according to the material properties and structure of RRAM. Then, recent advances in the resistive mechanisms of RRAM are comprehensively discussed and evaluated based on experimental research results and fundamental physics principles. Then, the electrochemical metallization mechanism and the valence change metallization mechanism are thoroughly studied, as well as the formation, fracture and resistance state change behavior of conductive filaments in RRAM based on the ion motion type. Then, various electron transport‐dominated resistance mechanisms are reviewed, and electron transport and resistance switching in the space‐charge‐limited current mode are thoroughly examined using energy band theory. As a result, a theoretical reference is provided for the development of nano‐thin film devices.This article is protected by copyright. All rights reserved.

Dielectric Properties and Carrier Transport Mechanism in Annealed HfOx‐Based Resistive Random Access Memory Devices

“…Resistive random access memory (RRAM) has been considered as a new replacement for contemporary flash memory due to its simple cell structure, lower manufacturing cost, high-density integration capability, and superior scalability. [1][2][3] In the past decade, hafnium oxide (HfO x )-based RRAM has been widely investigated as a next-generation nonvolatile memory device due to its high dielectric constant, wide band gap, high thermodynamic stability, and compatibility with complementary metal oxide semiconductor technology. [4][5][6] To date, device reliability remains a significant obstacle for the design and application of RRAM.…”