2018
DOI: 10.1007/s12633-018-9990-1
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ZnMgO-nanorod-based Schottky Light-emitting Diode Fabricated on n-SiC Substrate Using Low-temperature Method

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Cited by 4 publications
(1 citation statement)
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“…For example, due to their large band gap energy (above 3.37 eV) and good electrical properties (high electron mobility and low resistance), ZnO-based materials have the great benefit to be applied in large-area TFT-LCD panels or transparent electronic circuits to increase the transparency. Because of the good optoelectronic properties in the near-UV range and their excellent chemical and thermal stabilities, they are promising materials for the next generation of short-wavelength light emitting diode (LED) and laser diodes [6]. Among ZnO-based materials, ZnMgO is a strong candidate for UV photodetectors due to its high absorption coefficient, tunable band gap energy (3.3-7.8 eV), and high radiation hardness [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…For example, due to their large band gap energy (above 3.37 eV) and good electrical properties (high electron mobility and low resistance), ZnO-based materials have the great benefit to be applied in large-area TFT-LCD panels or transparent electronic circuits to increase the transparency. Because of the good optoelectronic properties in the near-UV range and their excellent chemical and thermal stabilities, they are promising materials for the next generation of short-wavelength light emitting diode (LED) and laser diodes [6]. Among ZnO-based materials, ZnMgO is a strong candidate for UV photodetectors due to its high absorption coefficient, tunable band gap energy (3.3-7.8 eV), and high radiation hardness [7,8].…”
Section: Introductionmentioning
confidence: 99%