Zn enhancement during surfactant-mediated growth of GaInP and GaP

Chapman, David C.; Howard, A. D.; Stringfellow, G. B.

doi:10.1016/j.jcrysgro.2005.10.089

Cited by 15 publications

(19 citation statements)

References 11 publications

(17 reference statements)

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“…Unlike previous results using Sb as a surfactant [20][21][22] we see an increase, rather than a reduction, in C. In fact we observe that the C and H concentrations both increase systematically. Furthermore, the H/Zn ratios are higher when DMHy is added than for similar experiments using TMSb as the surfactant [20,21].…”

Section: Resultscontrasting

confidence: 93%

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Effects of dimethylhydrazine on Zn, C, and H doping of GaP

Howard

Stringfellow

2008

Journal of Crystal Growth

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Section: Resultscontrasting

confidence: 93%

“…Furthermore, the H/Zn ratios are higher when DMHy is added than for similar experiments using TMSb as the surfactant [20,21]. This is thought to be due to the products of DMHy pyrolysis [23], which result in C and H contaminants in the GaP, as will be discussed in more detail below.…”

Section: Resultsmentioning

confidence: 83%

Effects of dimethylhydrazine on Zn, C, and H doping of GaP

Howard

Stringfellow

2008

Journal of Crystal Growth

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“…Whether small elements like hydrogen can serve as surfactants is an interesting and open question in the growth of GaN or ZnO [39,40,[44][45][46]. Limited studies of H as surfactants were reported in a few other semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Zhang

Tse

et al. 2018

Phys. Rev. Materials

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Heterostructures of wurtzite based devices have attracted great research interests since the tremendous success of GaN in light emitting diodes (LED) industry. Among the possible heterostructure material candidates, high quality GaN thin films on inexpensive and lattice matched ZnO substrate are both commercially and technologically desirable. However, the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces. Therefore, the intrinsic wetting condition forbids such heterostructures.As a result, poor crystal quality and 3D growth mode were obtained. To dramatically change the growth mode of the heterostructure, we propose to use hydrogen as a surfactant, confirmed by our first principles calculations. Stable H involved surface configurations and interfaces are investigated, with the help of newly developed algorithms. By applying the experimental Gibbs free energy of H2, we also predict the temperature and chemical potential of H, which is critical in experimental realizations of our strategy. This novel approach will for the first time make the growth of high quality GaN thin films on ZnO substrates possible. We believe that our new strategy may reduce the manufactory cost and improve the crystal quality and the efficiency of GaN based devices.

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“…Also, the surfactants can change the electronic structure of the thin film and tune the doping [10][11][12][13][14]. Recent experimental and theoretical works indicate that the introduction of surfactants is an effective way to enhance dopant solubility in various III-V materials [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Overcoming doping bottleneck by using surfactant and strain

Zhu

Wei

2011

Front. Mater. Sci.

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Overcoming the doping bottleneck in semiconductors, especially in wide band gap semiconductors, has been a challenge in semiconductor physics for many years. In this paper, we review some recent progresses in enhancing doping by surfactant and strain. We show that surfactant and strain are two effective approaches to enhance dopant solubility in epitaxial growth. The surfactant can introduce an energy level deep inside the band gap, making the host compound less stable, thus lower the formation energy of the intentional dopant. The strain enhanced doping is based on the observation that dopant induces volume change in the host. If the external strain is in the same direction as the dopant induced volume change, the formation energy of the dopant is reduced. This effect can be used to tune doping sites, thus doping type, in a host. A hybrid method to both include strain and surfactant is proposed, which can be a promising general method to further enhance doping.

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Zn enhancement during surfactant-mediated growth of GaInP and GaP

Cited by 15 publications

References 11 publications

Effects of dimethylhydrazine on Zn, C, and H doping of GaP

Effects of dimethylhydrazine on Zn, C, and H doping of GaP

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Overcoming doping bottleneck by using surfactant and strain

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