Zinc tin oxide thin film transistor sensor

Dutta, Soumya; Dodabalapur, Ananth

doi:10.1016/j.snb.2009.07.056

Cited by 35 publications

(25 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ZTO has promising applications in photovoltaic devices, combustible gases and humidity detection, photo-electrochemistry, functional coatings, and transparent conducting electrodes owing to its good electron mobility, highelectrical conductivity, and low visible absorption [8][9][10][11][12][13]. Recently, such potential applications as electrode material for Li-ion batteries and dye-sensitized solar cells (DSSCs) have been demonstrated [12,[14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Hydrothermal synthesis of novel Zn2SnO4 octahedron microstructures assembled with hexagon nanoplates

Huang

Liu

et al. 2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Hydrothermal synthesis of novel Zn2SnO4 octahedron microstructures assembled with hexagon nanoplates

Huang

Liu

et al. 2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…The values of rms surface roughness for ZTO are much smaller due to their amorphous nature and are comparable to previously reported values. 14,28 The rms surface roughness decreases slightly after annealing the a-ZTO films. The ZnO film shows similar rms surface roughness before and after annealing, but the grain size increases after annealing as clearly shown in the AFM images, agreeing with that estimated from the XRD measurements.…”

Section: -4mentioning

confidence: 99%

“…11 Despite these challenges, highly conductive and transparent ZTO TCOs have recently been demonstrated for largearea flexible organic light emitting diodes (OLEDs). 13 Moreover, ZTO is highly resistant to atmospheric influences and chemical treatments; as such this property has been exploited in other applications such as the active material in gas sensors, 14 the buffer layer in solar cells, 15,16 and passivation layers in IGZO TFTs. 17 With the emergence of ionic oxides as channel materials in TFTs, 3,18,19 ZTO has also been explored previously.…”

mentioning

confidence: 99%

Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

Niang

Cho

Heffernan

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

The influence of the stoichiometry of amorphous zinc tin oxide (a-ZTO) thin films used as the semiconducting channel in thin film transistors (TFTs) is investigated. A-ZTO has been deposited using remote-plasma reactive sputtering from zinc:tin metal alloy targets with 10%, 33%, and 50% Sn at. %. Optimisations of thin films are performed by varying the oxygen flow, which is used as the reactive gas. The structural, optical, and electrical properties are investigated for the optimised films, which, after a post-deposition annealing at 500 °C in air, are also incorporated as the channel layer in TFTs. The optical band gap of a-ZTO films slightly increases from 3.5 to 3.8 eV with increasing tin content, with an average transmission ∼90% in the visible range. The surface roughness and crystallographic properties of the films are very similar before and after annealing. An a-ZTO TFT produced from the 10% Sn target shows a threshold voltage of 8 V, a switching ratio of 108, a sub-threshold slope of 0.55 V dec−1, and a field effect mobility of 15 cm2 V−1 s−1, which is a sharp increase from 0.8 cm2 V−1 s−1 obtained in a reference ZnO TFT. For TFTs produced from the 33% Sn target, the mobility is further increased to 21 cm2 V−1 s−1, but the sub-threshold slope is slightly deteriorated to 0.65 V dec−1. For TFTs produced from the 50% Sn target, the devices can no longer be switched off (i.e., there is no channel depletion). The effect of tin content on the TFT electrical performance is explained in the light of preferential sputtering encountered in reactive sputtering, which resulted in films sputtered from 10% and 33% Sn to be stoichiometrically close to the common Zn2SnO4 and ZnSnO3 phases.

show abstract

“…Solution-processed amorphous zinc-tin-oxide (a-ZTO) thin films have, nowadays, attracted much attention as active layers in the fabrication of low-cost roll-to-roll printed thin film transistors (TFTs) because of their simplicity, low-cost, high throughput, and non-toxicity [1][2][3][4][5][6][7][8]. For low temperatures ranging from 77 to 300 K, the TFTs with a-ZTO active material also have very interesting charge transport mechanisms, ranging from thermally activated transport at low carrier densities in the saturation (on) region [9] or in the subthreshold region [10] to band transport at large carrier densities in the saturation region [2,9].…”

Section: Introductionmentioning

confidence: 99%

Charge transport at high temperatures in solution-processed zinc-tin-oxide thin-film transistors

Bae

Jung

et al. 2014

Journal of the Korean Physical Society

View full text Add to dashboard Cite

We report charge transport studies at temperatures in the range of 303 − 402 K for solutiondeposited amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operating in the subthreshold region. The developed TFTs, which had a non-patterned bottom gate and top contact structure, employed a heavily-doped Si wafer and a SiO2 as a gate electrode and a gate insulator layer, respectively. In a-ZTO, the trap activation energy (ETAC) was estimated using the Maxwell-Boltzmann approximation. The decreasing ETAC with increasing gate-voltage-induced sheet carrier density (ns) in the a-ZTO channel can be understood as being due to a shift of the Fermi level (EF ) toward the conduction band edge (EC ) with increasing gate voltage. Samples with low ns, which exhibited thermally-activated behavior, revealed multiple trap and release phenomena. In samples with high ns, on the other hand, we observed decreasing mobility/conductivity with increasing temperature at temperatures higher than 348 K. This suggests that the ETAC can drop to zero, implying a shift of EF beyond EC , where the crossover from the thermal activation to band transport is observed. The temperature-dependent characteristics also revealed that the density of subgap trap states at EF exhibited thermally-activated behavior with an activation energy of 0.7 eV, suggesting that subgap trap states existed near 0.7 eV below the EC .

show abstract

Zinc tin oxide thin film transistor sensor

Cited by 35 publications

References 24 publications

Hydrothermal synthesis of novel Zn2SnO4 octahedron microstructures assembled with hexagon nanoplates

Hydrothermal synthesis of novel Zn2SnO4 octahedron microstructures assembled with hexagon nanoplates

Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

Charge transport at high temperatures in solution-processed zinc-tin-oxide thin-film transistors

Contact Info

Product

Resources

About