2019
DOI: 10.1007/s11082-019-2132-1
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Zinc oxide: reduced graphene oxide nanocomposite film for heterogeneous photocatalysis

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Cited by 11 publications
(6 citation statements)
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“…It can be considered as a suitable successor of the benchmark TiO 2 semiconductor due to its similar properties such as strong oxidation ability, good photocatalytic properties, chemical stability, biocompatibility, non-toxicity, high photosensitivity, and electronic and piezoelectric properties, among others [13][14][15]. This semiconductor usually exists in one-dimensional (1D), two-dimensional (2D) and three-dimensional (3D) associations [16], and has been used in a wide range of applications, such as sensors [17], photocatalysis [14,[18][19][20][21], transistors, solar cells [22,23], etc. It is well known that the use of ZnO in photocatalysis displays some drawbacks such as: (i) the limitation of its use in the visible range due to its wide band gap [24]; (ii) particle aggregation during photocatalytic reactions which significantly restrict the photocatalytic activity of ZnO at a large scale [25]; and (iii) the rapid recombination of the photogenerated electron-hole pairs [26,27].…”
Section: Introductionmentioning
confidence: 99%
“…It can be considered as a suitable successor of the benchmark TiO 2 semiconductor due to its similar properties such as strong oxidation ability, good photocatalytic properties, chemical stability, biocompatibility, non-toxicity, high photosensitivity, and electronic and piezoelectric properties, among others [13][14][15]. This semiconductor usually exists in one-dimensional (1D), two-dimensional (2D) and three-dimensional (3D) associations [16], and has been used in a wide range of applications, such as sensors [17], photocatalysis [14,[18][19][20][21], transistors, solar cells [22,23], etc. It is well known that the use of ZnO in photocatalysis displays some drawbacks such as: (i) the limitation of its use in the visible range due to its wide band gap [24]; (ii) particle aggregation during photocatalytic reactions which significantly restrict the photocatalytic activity of ZnO at a large scale [25]; and (iii) the rapid recombination of the photogenerated electron-hole pairs [26,27].…”
Section: Introductionmentioning
confidence: 99%
“…Among different surface functionalizing agents, the research on metal oxide nanoparticles has recently gained momentum mainly because of their benign and highly catalytic nature, good stability, and cost-effectiveness . Metal oxide nanoparticles exhibit a wide range of applications in different areas of modern science, such as electrochemical sensors, energy storage, supercapacitors, adsorption, photocatalysis, drug delivery, biotechnology, , separation sciences, and electronics. , Zinc oxide nanoparticles (ZnO-NPs) are n-type semiconductor materials that exhibit a hexagonal wurtzite structure with a wide band gap (3.7 eV), nontoxic nature, low-cost, and outstanding properties such as high surface area and extraordinary mechanical, chemical, and electrical properties. , Due to these excellent properties, the ZnO-NPs are being extensively employed in various advanced fields, viz catalysis, photonic detectors, photovoltaics, optoelectronics devices, polarized light-emitting devices, and sensors. In addition, nickel oxide (NiO) is a p-type semiconductor material with a band gap ranging from 3.6 to 4.0 eV . NiO-NPs have exceptional properties, such as high surface area, optical stability, variable oxidation state, high power density, large theoretical capacitance, fast electron transport, excellent electrical, mechanical and catalytic properties, etc.…”
Section: Introductionmentioning
confidence: 99%
“…93,95−97 Zinc oxide nanoparticles (ZnO-NPs) are ntype semiconductor materials that exhibit a hexagonal wurtzite structure with a wide band gap (3.7 eV), nontoxic nature, lowcost, and outstanding properties such as high surface area and extraordinary mechanical, chemical, and electrical properties. 98,99 Due to these excellent properties, the ZnO-NPs are being extensively employed in various advanced fields, viz catalysis, photonic detectors, photovoltaics, optoelectronics devices, polarized light-emitting devices, and sensors. 100−103 In addition, nickel oxide (NiO) is a p-type semiconductor material with a band gap ranging from 3.6 to 4.0 eV.…”
Section: ■ Introductionmentioning
confidence: 99%
“…To enhance the photocatalytic activity of ZnS nanoparticles, they were located on the surface of graphene nanosheets. According to literature, the photocatalytic activity of semiconductor materials can be improved by the graphene addition since graphene with larger surface area provides more active adsorption sites acting as photocatalytic reaction centers [17][18][19].…”
Section: Introductionmentioning
confidence: 99%