Zinc-induced changes on structural pathways, optical parameters, optical constants extracted by Kramers-Kronig Formulas, Photoluminescence Spectra and photovoltaic characteristics of n-Cd50Zn S50/i-AgSe/p-Si solar cells

Effective role of vacuum annealing in improving structural, optical, and electrical properties of SiO2/Ag/ZnO multilayers deposited by RF sputtering for optoelectronic applications

“…It has been revealed that as the annealing temperature increases, the grain size of as-prepared and annealed thin layers grows while the values of lattice microstrain, an indicator of dislocation density, and the number of crystallites per unit surface area decrease. This behavior can be explained as follows: when the temperature rises, the uniformity of atoms growing according to a given structural pattern improves, resulting in a noticeable increase in broad peaks for each phase individual [42,43]. As a result, increasing peak intensity and decreasing FWHM of XRD peaks rectified for experimental broadening contributes to increasing crystallite size and decreasing lattice strain [43].…”

“…This behavior can be explained as follows: when the temperature rises, the uniformity of atoms growing according to a given structural pattern improves, resulting in a noticeable increase in broad peaks for each phase individual [42,43]. As a result, increasing peak intensity and decreasing FWHM of XRD peaks rectified for experimental broadening contributes to increasing crystallite size and decreasing lattice strain [43]. The dislocation density: (the length of dislocation lines in crystal unit volume is a measure of thin-film imperfections) and the number of crystallites per unit surface area, on the other hand, exhibit the same lattice microstrain behavior for the same reason.…”

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

“…That is, these resistances increase with increasing temperature. In fact, when the recombination speed increases, the diode acts like a resistor, hindering the flow and passage of current [32][33][34][35][36]. The integration and interdependence in the properties of chalcogenide compounds, or those that contain at least a chalcogen element, or that are based in their synthesis on silicon and transitional elements, were received extensive studies, as the optical and electrical properties have been employed to determine the suitability of these systems for photovoltaic applications, especially for various uses in solar cells [37][38][39][40][41][42], optoelectronics [43][44][45][46][47][48][49][50][51][52][53][54][55][56], and electrodes [57][58][59][60].…”