Zinc diffusion enhanced Ga diffusion in GaAs isotope heterostructures

Bracht, H.; Norseng, M.S.; Häller, E. E.; Eberl, K.

doi:10.1016/s0921-4526(01)00817-1

Cited by 14 publications

(15 citation statements)

References 12 publications

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“…Different equilibrium values of group III vacancies in AlAs and GaAs can be explained with the difference in the electronic structure between these materials. Compared to Ga diffusion in GaAs a higher Al diffusivity was observed in AlGaAs, which is consistent with the higher jump frequency of 27 Al compared to 71 Ga, due to the differences in their masses. Finally, we also investigated the effect of n-and ptype doping on the diffusion of 69 Ga at a 71 GaAs/ nat.…”

Section: Self-diffusion In Group Iii-v Compound Semiconductorssupporting

confidence: 77%

“…Zn diffusion in GaP also seems to indicate that neutral Ga interstitials mediate Ga diffusion [25,26] but still further investigations are required. Recent results on Ga and Zn diffusion in GaAs [17,27,28] are consistently explained with a Ga vacancy-mediated Ga diffusion under standard conditions (electronically intrinsic conditions and an arsenic partial pressure of 1 atm) and the existence of neutral and singly positively charged Ga interstitials whose contribution to Ga diffusion lies below the total Ga diffusion coefficient.…”

Section: Figure 3 Sims Depth Profiles Ofmentioning

confidence: 80%

“…Zn and Ga diffusion profiles were simultaneously recorded by means of secondary ion mass spectrometry and accurately described assuming that neutral Ga interstitials and neutral and singly positively charged Ga vacancies are involved in Zn diffusion [27]. The Ga and Zn SIMS depth profiles and the computer model fits are presented in Figure 5.…”

Section: Interference Between Self-atom and Dopant Diffusionmentioning

confidence: 99%

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Advanced diffusion studies with isotopically controlled materials

Bracht

Silvestri

Häller

2005

Solid State Communications

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The use of enriched stable isotopes combined with modern epitaxial deposition and depth profiling techniques enables the preparation of material heterostructures, highly appropriate for self-and foreign-atom diffusion experiments. Over the past decade we have performed diffusion studies with isotopically enriched elemental and compound semiconductors. In the present paper we highlight our recent results and demonstrate that the use of isotopically enriched materials ushered in a new era in the study of diffusion in solids which yields greater insight into the properties of native defects and their roles in diffusion. Our approach of studying atomic diffusion is not limited to semiconductors and can be applied also to other material systems. Current areas of our research concern the diffusion in the silicon-germanium alloys and glassy materials such as silicon dioxide and ion conducting silicate glasses. * corresponding author IntroductionThe diffusion of atoms in materials is a fundamental process of mass transport that is important for numerous applications. For example, doping of silicon is often performed by the diffusion of the desired foreign-atom into the material. The current standard of very shallow dopant profiles of only a few tenths of nanometers by ion implantation requires a strong control of diffusion and reaction processes in order to minimize transient-diffusion effects [1]. With the down-scaling of Si-based electronic devices, interfaces are becoming more significant and can affect the diffusion in the bulk material of interest. In this context, the reactions occurring at the SiO 2 /Si interface are very important in order to understand the oxidation process of Si and the ability of the interface to act as a source of point defects. The large scale production of electronic and optoelectronic devices based on group III-V compound semiconductors also requires highly reproducible doping processes. To meet this requirement the reason for the often observed complicated shape of dopant profiles in compound semiconductors must be understood. These examples illustrate that a comprehensive understanding of the mechanisms of dopant diffusion and the properties of native point defects in the underlying material, which includes their generation, recombination and interaction with dopant atoms, are of fundamental significance for controlling the fabrication of electronic devices.

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Section: Self-diffusion In Group Iii-v Compound Semiconductorssupporting

confidence: 77%

Section: Figure 3 Sims Depth Profiles Ofmentioning

confidence: 80%

Section: Interference Between Self-atom and Dopant Diffusionmentioning

confidence: 99%

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Advanced diffusion studies with isotopically controlled materials

Bracht

Silvestri

Häller

2005

Solid State Communications

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“…It is supposed that the kick-out mechanism is also responsible for the diffusion of gold in silicon [7,8]; zinc [9][10][11][12][13][14][15][16], nitrogen [17][18][19], magnesium [20][21][22], and beryllium [11,14,20,23] in GaAs. As follows from the data of investigations [14,24,25], beryllium diffusion in other compound semiconductors is governed by the kick-out mechanism too.…”

Section: Introductionmentioning

confidence: 99%

Macroscopic description of the diffusion of interstitial impurity atoms considering the influence of elastic stress on the drift of interstitial species

Velichko

2008

Philosophical Magazine

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The diffusion equation for non-equilibrium interstitial impurity atoms taking into account their charge states and drift of all mobile interstitial species in the built-in electric field and in the field of elastic stress is obtained. The obtained generalized equation is equivalent to the set of diffusion equations written for the interstitial impurity atoms in each individual charge state. Due to a number of characteristic features the generalized equation is more convenient for numerical solution than the original system of separate diffusion equations. On this basis, the macroscopic description of stress-mediated impurity diffusion due to a kick-out mechanism is obtained. It is supposed that the interstitial impurity atom makes a number of jumps before conversion to the substitutional position. At the same time, local equilibrium prevails between substitutionally dissolved impurity atoms, non-equilibrium self-interstitials, and interstitial impurity atoms. Also, the derived equation for impurity diffusion due to the kick-out mechanism takes into account all charge states of interstitial impurity atoms as well as drift of interstitial species in the electric field and in the field of elastic stress. Moreover, this equation exactly matches the equation of stress-mediated impurity diffusion due to the generation, migration, and dissociation of the equilibrium 'impurity atom-self-interstitial' pairs.

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“…The kink-and-tail type profile can also be got from zinc diffusion in GaAs. Bracht and Brotzmann [12,13] simulated the kink-and-tail profiles in GaAs using three kinds of native defects which took part in the different areas, and they thought the near surface kink was a consequence of 0 Ga V and Ga V − controlled dopant diffusion and the profile tail was shaped by the diffusion of 0 Ga I .Reynolds et al [14] also simulated the kink-and-tail profiles from zinc diffusion in GaAs. They first analyzed the zinc concentration profiles using the Boltzmann-Matano method, and got the results that the diffusion coefficient (D) showed different relationship with the zinc concentration (N x , the subscript x is the distance from the surface) in different regions: Table 1 lists the parameters of D i (the diffusion coefficient of…”

mentioning

confidence: 99%

Experimental and theoretical investigation of zinc diffusion in N-GaSb

Tang

2010

Chin. Sci. Bull.

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Zinc diffusion process in N-GaSb was studied with excessive, appropriate and insufficient quantity of diffusion source (zinc pellets). Kink-and-tail type zinc concentration profiles obtained with appropriate zinc pellets quantity were successfully simulated using the assumption that the vacancy mechanism mediated by V 0 Ga and kick-out mechanism mediated by I + Ga take effect at the same time. It is found out that for diffusion temperature from 460°C to 500°C, the zinc surface concentration of the diffused samples has nearly no change and the logarithmic value of the zinc surface diffusion coefficient is linear with the reciprocal value of diffusion temperature; when the diffusion temperature is constant, both the zinc surface concentration and diffusion coefficient do not change with diffusion time. GaSb, zinc diffusion, kink-and-tail profile, diffusion mediated by multiple defects

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Zinc diffusion enhanced Ga diffusion in GaAs isotope heterostructures

Cited by 14 publications

References 12 publications

Advanced diffusion studies with isotopically controlled materials

Advanced diffusion studies with isotopically controlled materials

Macroscopic description of the diffusion of interstitial impurity atoms considering the influence of elastic stress on the drift of interstitial species

Experimental and theoretical investigation of zinc diffusion in N-GaSb

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