Experimental and theoretical investigation of zinc diffusion in N-GaSb

Ye, Hong; Tang, Liangliang; Ma, YuLong

doi:10.1007/s11434-010-4037-z

Cited by 9 publications

(5 citation statements)

References 15 publications

(17 reference statements)

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“…The carrier for wafers and diffusion sources is a pseudo-closed box made of quartz. The graphite box we used previously [12] is not chosen here because it can easily pollute the diffusion furnace. The carrier was placed in the center of a small sized OTF-1200X tube furnace.…”

Section: Experimental Procedures For Zn Diffusionmentioning

confidence: 99%

“…The resulting Zn diffusion profiles in the n-GaInAsSb were obtained using a CAMECA IMS4F secondary ion mass spectrometer (SIMS). for n-GaSb [12,13]. All the Zn profiles obtained under pure Zn conditions are not suitable for fabricating GaInAsSb cells directly because the lifetime of minority carriers is extremely short in the "dead region"; precise etching processes are necessary.…”

Section: Experimental Procedures For Zn Diffusionmentioning

confidence: 99%

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Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

Tang

Liu

et al. 2017

Solar Energy Materials and Solar Cells

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Zn diffusion processes in n-Ga 0.78 In 0.22 As 0.2 Sb 0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface "dead region". The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The "dead region" is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055℃-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.

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Section: Experimental Procedures For Zn Diffusionmentioning

confidence: 99%

Section: Experimental Procedures For Zn Diffusionmentioning

confidence: 99%

Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

Tang

Liu

et al. 2017

Solar Energy Materials and Solar Cells

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“…Modeling of the experimental impurity profiles using continuum theoretical calculations are also reported in ref [21] . Zn diffusion in GaSb is investigated in ref [22] and Kink-and-tail type diffusion profiles are resulted. A substitutional-interstitial-diffusion (SID) mechanism is proposed in ref [23] for diffusion of chromium in GaAs.…”

Section: Introductionmentioning

confidence: 99%

Study of closed-tube Cd diffusion in InSb for mid-IR detector-based applications

Pourali

2018

Heliyon

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Diffusion process of Cadmium (Cd) in indium antimonide (InSb), in a closed tube system, was studied using Hall measurement technique. Various experiments are carried out to achieve a suitable and sustainable procedure. Process details are reported and discussed in the context. Impurity concentration profiles are modeled using an optimized interstitial-substitutional approach. These Mathematical models are in good agreement with experimental data and can be employed in numerical simulations of InSb-based devices.

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“…Because Zn profile in GaSb after diffusion exerts a significant influence on the performance of the devices, it is necessary to understand the diffusion mechanism of Zn in GaSb to strictly control the diffusion process. In the past four decades, a great deal of work has been carried out studying the diffusion of Zn into GaSb [7][8][9][10][11][12][13][14][15][16][17]. According to the published work, the boundary condition at the wafer surface plays a key role in modeling the Zn concentration profiles.…”

Section: Introductionmentioning

confidence: 99%

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

2016

J Mater Sci

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Understanding the Zn diffusion behavior in GaSb is very important to accurately control the distribution of Zn during the fabrication of photoelectric devices. The surface concentration and effective surface diffusivity are two key parameters for modeling the Zn profile in GaSb. The experimental results indicated that when the diffusion temperature and time are kept unchanged, the diffusion profiles with pure Zn, Zn-Sb, and Zn-Ga sources differ in the surface concentration and effective surface diffusivity. To quantitatively explain the effects of source composition on the two parameters, the relationship between the two parameters and the vapor pressure surrounding the GaSb wafer in the diffusion process was deduced based on a surface-equilibrium assumption and the substitutional-interstitial mechanism. The Ga/Sb/Zn ternary phase diagram was calculated and discussed for determining the vapor pressures in different source cases. The ratio of surface concentrations and that of effective surface diffusivities between different sources were obtained to quantitatively explain the experiment results. The theoretical and experimental results both indicated that adding Sb to pure Zn source keeps the surface concentration unchanged while slightly decreases the effective surface diffusivity, and that adding Ga to pure Zn source significantly decreases both the surface concentration and effective surface diffusivity.

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Experimental and theoretical investigation of zinc diffusion in N-GaSb

Cited by 9 publications

References 15 publications

Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

Study of closed-tube Cd diffusion in InSb for mid-IR detector-based applications

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

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