Zinc and group V element co-implantation in indium phosphide

Yu, K. M.; Ridgway, Mark C

doi:10.1016/s0168-583x(99)00806-x

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2000

2021

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 7 publications

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An approximate "one to one" correlation between atom and carrier concentrations has been reported by many authors [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Hall Effect measurements on p-n-p InP structures

Sequeira

Santos

2008

Braz. J. Phys.

View full text Add to dashboard Cite

The electrical properties of p-type layers of indium phosphide (InP), formed by the diffusion of zinc into n-type material, are studied by Hall Effect measurements. A wide range of diffusion conditions are used and both homogeneously doped specimens and those containing a zinc atom concentration gradient are produced. A non-correspondence of atom and carrier concentrations is indicated, confirming previous four point resistivity studies. Carrier profiles are achieved by both serial sectioning and multiple specimen techniques. Contacting procedures are developed from which plots of carrier mobility versus carrier concentration, in the range 5 x 10 17 -5 x 10 19 cm −3 , are produced for p-n-p InP. In the main, present results showed good reproducibility and conformed to the "rules" of the Van der Pauw technique.

show abstract

“…An approximate "one to one" correlation between atom and carrier concentrations has been reported by many authors [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%