Hall Effect measurements on p-n-p InP structures

Sequeira, C. A. C.; Santos, Diogo M.F.

doi:10.1590/s0103-97332008000100027

Cited by 4 publications

(3 citation statements)

References 15 publications

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“…Their values are determined using experimental data reported in Refs. and [26][27][28][29][30][31]35], respectively. The rest of the electrical conductivities are taken from Refs.…”

Section: Theoretical Modelmentioning

confidence: 99%

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

et al. 2013

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In the present paper, a comprehensive computer simulation is used to determine optimal structure of the InPbased GaInNAs quantum-well (QW) active region and to investigate a possibility of reaching room-temperature (RT) continuous-wave (CW) single-fundamental-mode 2.33-µm operation of vertical-cavity surface-emitting laser (VCSEL) with such an active region. From among various considered InP-based active regions, the one with the Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QW, i.e. with barriers lattice matched to InP, seems to be optimal for the 2.33-µm VCSEL performance. Its QW material is chosen for the required long-wavelength emission whereas its barrier is expected to ensure promising laser performance at room and higher temperatures. The latter is mostly connected with the QW conduction band offset equal in the above active region to as much as 413 meV, which is much larger than those of its possible lattice matched to InP competitors, e.g. 276 meV for the Ga 0.47 In 0.53 As barrier and 346 meV for the Ga 0.327 In 0.673 As 0.71 P 0.29 one. Our simulation reveals that from among various considered structures, a VC-SEL with a 4-µm-diameter tunnel junction and two 6-nm Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QWs exhibits the lowest calculated threshold current of 0.88 mA. Its promising RT CW performance suggests that it may represent a very interesting alternative to GaSb-based VCSELs.

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“…Their values are determined using experimental data reported in Refs. and [26][27][28][29][30][31]35], respectively. The rest of the electrical conductivities are taken from Refs.…”

Section: Theoretical Modelmentioning

confidence: 99%

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

et al. 2013

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“…Using the data of [25,[32][33][34][35][36][37][38][39], we calculate electron mobility in Si-and Zn-doped InP from the following relations:…”

Section: Materials Parameters Used In the Electrical Modelmentioning

confidence: 99%

“…The relation between the free hole concentration in Zndoped InP and the acceptor concentration N a is taken from [39]:…”

Section: Materials Parameters Used In the Electrical Modelmentioning

confidence: 99%

GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

Piskorski¹,

Sarzała²

2013

Bulletin of the Polish Academy of Sciences: Technical Sciences

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Abstract. In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 µm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-µm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138-Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.

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Capacitance–voltage measurements on p–n–p InP structures

Sequeira

Santos

2009

Physica B: Condensed Matter

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Hall Effect measurements on p-n-p InP structures

Cited by 4 publications

References 15 publications

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

Capacitance–voltage measurements on p–n–p InP structures

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