Zero-Phonon Lines: The Effect of a Strong Softening of Elastic Springs in the Excited State

Hizhnyakov, V.; Kaasik, Helle; Силдос, И.

doi:10.1002/1521-3951(200211)234:2<644::aid-pssb644>3.0.co;2-e

Cited by 53 publications

(68 citation statements)

References 21 publications

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“…The sum of the first and second terms, T 7 and T 3 , reflects the impact of electron-phonon coupling in the case of degenerate electronic states including the effect of softening of bonds in the colour centre excited state. At the same time, the dominance of the T 3 term was verified for N-V centre [26]. The third term T 5 is characteristic for the temperature dependence of the ZPL width under the action of dynamic Jahn-Teller effect in the involved degenerate electronic state.…”

Section: Lorentzian and Two Gaussian Curvesmentioning

confidence: 67%

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Dragounová

Potůček

Potocký

et al. 2017

Journal of Electrical Engineering

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In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 -300 K and used to determine the temperature dependence of the zero-phononline full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.K e y w o r d s: silicon-vacancy centres, photoluminescence, low temperature, diamond, CVD

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Section: Lorentzian and Two Gaussian Curvesmentioning

confidence: 67%

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Dragounová

Potůček

Potocký

et al. 2017

Journal of Electrical Engineering

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“…PL data for the NV 0 center are reported again for comparison. The T 3 dependence of the FWHM peaks, highlighted by the fitting lines, is associated with the softening of the chemical bonds of the defect complex and results in a stronger coupling of its excited state with lattice phonons [23]. The FWHM increase versus temperature is less pronounced for HR centers with respect to the NV 0 emission, indicating that the former are characterized by a lower phonon coupling, as confirmed by their weaker phonon sidebands.…”

Section: Figure 2(b)mentioning

confidence: 92%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

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Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He + ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 ± 5) ns and (106 ± 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1×10 10 cm -2 He + ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications. MAIN TEXTColor centers in diamond are appealing physical systems for application in emerging quantum technologies. In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].The formation of optically active defects in diamond upon He implantation followed by annealing in vacuum was recently reported [9]. The spectral features of these defects consist of two narrow emission lines at 536 nm and 560.5 nm, and a phonon sideband in the 572-630 nm spectral range. Following their initial observation in cathodoluminescence (CL) [10,11], their optical activity was investigated in both photoluminescence (PL) and electroluminescence (EL) [9,12]. The need of understanding the possible formation of stable optically active centers, whose current (and still tentative) attribution is based on He incorporation in the diamond lattice, motivates a further investigation of their opto-physical properties. More specifically, the centers have so far been attributed to the He-vacancy complex [13], and density functional theory calculations demonstrated that both this structure and the interstitial He defect could result in stable complexes in the diamond lattice [14]. Apart from this limited body of works, a systematic set of experimental results on the characterization of the ...

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“…The adiabatic potential of the E-state is given by the matrix V 2 in the diagonal representation; it has the form of the Mexican hat [15,[9][10][11]. The vibronic E-state is invariant with respect to the rotation of the q 1 ; q 2 -surface through an arbitrary angle f with the simultaneous rotation of the electronic basis states on the angle 2j: In polar coordinates r ¼ ðq 2 1 þ q 2 2 Þ 1=2 and f ¼ arctanðq 2 =q 1 Þ the adiabatic potentials do not depend on j:…”

Section: A 1 -And E-electronic Statesmentioning

confidence: 99%

“…: If one takes into account also the quadratic vibronic interaction in the E-state, then the f-dependent term appears in the APES of this state [15,[9][10][11] …”

Section: A 1 -And E-electronic Statesmentioning

confidence: 99%

See 1 more Smart Citation

Phase relaxation in the vicinity of the dynamic instability: anomalous temperature dependence of zero-phonon line

Hizhnyakov

Boltrushko

Kaasik

et al. 2004

Journal of Luminescence

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Zero-Phonon Lines: The Effect of a Strong Softening of Elastic Springs in the Excited State

Cited by 53 publications

References 21 publications

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Photo-physical properties of He-related color centers in diamond

Phase relaxation in the vicinity of the dynamic instability: anomalous temperature dependence of zero-phonon line

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