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Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si

“…MILC rate is low, and the residual metal in active regions may deteriorate electrical characteristics of a thin film transistor (TFT) [2]. To overcome these drawbacks, a process called field-aided lateral crystallization (FALC) emerges [3,4]. FALC is a process with an external electric field applied on both sides of the metal contact area under thermal treatment.…”

Effects of an alternating field in field-aided lateral crystallization process for low temperature poly-silicon

“…Among a variety of crystallization techniques available to obtain poly-Si at low temperatures, the field-aided lateral crystallization (FALC) process is known to be induced by an influence of the electric field toward a specified direction after the silicide phase formation by a reaction between a metal catalyst and a-Si [8,9]. It is reported that the crystallization rate by the FALC process is much faster than that by the metalinduced lateral crystallization (MILC) process [10,11].…”

Low-temperature crystallization of amorphous silicon using Cu field-aided lateral crystallization at 350°C

“…With the attractive technology of field-aided lateral crystallization (FALC), the crystallization time can be shortened and the metal contaminant in the active area of the transistors can be minimized. 5,6 In addition, the applied field can induce directional crystal growth, which is advantageous in fabrication of devices in terms of mobility. 6,7 Also, we have applied Cu to the FALC process, and as a result, Cu was found to induce lateral crystallization at lower temperatures (Ͻ500°C) under the influence of an electric field as low as 30 V/cm.…”

“…5,6 In addition, the applied field can induce directional crystal growth, which is advantageous in fabrication of devices in terms of mobility. 6,7 Also, we have applied Cu to the FALC process, and as a result, Cu was found to induce lateral crystallization at lower temperatures (Ͻ500°C) under the influence of an electric field as low as 30 V/cm. Furthermore, the velocity of Cu-FALC was faster than that of Ni-FALC under the same conditions.…”