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Swift Heavy Ion Irradiation of Single-crystal Indium Phosphide

“…There is one to one correspondence between the track density and ion fluences which rules out any pre-damaging condition for track registration in InP [2]. Figure 2 reveals an ensemble of individual latent tracks showing regular intermittent structure, which suggests that the basic registration phenomenon may not be due to charge fluctuation processes [3]. Atomic defect rearrangement processes are more likely in the aftermath and quench of a complex "compound spike" [4].…”

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

“…It is known that these processes may variously influence the profile according to experi mental conditions and physicochemical properties of target and impurity atoms. This generates a need to cor rect the existing models [6,7] and the diffusion kinetics parameters used in them [8,9]. In previous works of our team, the high dose implantation of atomic and molec ular nitrogen into iron [8], silicon [9], and copper [10] was studied for the case when dopant atoms chemically interact with target atoms to produce stable iron, sili con, and copper nitrides.…”

ESR study of bimetallic Cu/Ag nanoparticles in micellar solutions and on a solid surface

“…A large number of fundamental reviews and monographs was published outlining the vast horizons in the application of nanoparticles in microelectronics, medicine, biology, materials science, chemistry, and physics (e.g., see [1][2][3][4]). …”