Z-Scan Study of Nonlinear Optical Coupling of PtO_x and Ge₂Sb₂Te₅ of Near-Field Optical Recording Structure

Abstract

Possibilities of manipulating the Rabi frequency and luminescence rate from degenerate-level systems as well as the velocity of self-induced transparency of multi-level media are studied using a unitary transformation. The Rabi frequency and luminescence rate of an electronic system whose ground level is degenerate and coupled to a resonant mode are found to depend on the level of the degeneracy. The velocity of multi-mode optical solitons in a multi-level medium is found to be influenced by the number of propagating resonant pulses. Physical realizations of relevant systems are proposed.

Time-resolved phase-change recording mark formation with zinc oxide near-field optical active layer

“…The materials for the synthesis of the novel optical active layers also have been widely explored and employed in the multiple layer structures of the optical recording scheme on optical disks. [16][17][18][19] The interaction and coupling between the generated nanostructures and the recording marks are the key processes for the super-resolution resolving ability and ultra-high density storage. [20][21][22] A carrier-to-noise ratio (CNR) value of around 20 dB has been demonstrated for the recording mark trains of 90 nm by using an optical system with the laser wavelength of 686 nm and an objective lens of 0.6 numerical aperture (NA).…”

Study of the optical response of phase‐change recording layer with zinc oxide nanostructured thin film

“…Nanostructured ZnO has attracted manifold interest recently for its room‐temperature blue‐UV lasing and wide optoelectronic applications (Cao, Xu, Seelig, et al , 2000; Cao, Xu, Zhang, et al , 2000; Wiersma, 2000; Huang et al , 2001). To pursue ultra‐high density optical recording ability, a promising method that uses a metallic oxide nanostructured thin film as a near‐field optical active layer to promote and enhance signals between adjacent recording marks has been studied in several types of near‐field optical disks with metallic oxide nanostructured thin films (Tsai & Lin, 2000; Tsai et al , 2000; Liu et al , 2001; Yu et al , 2004; Fu et al , 2006). To achieve our purpose of ultra‐high density recording ability, we prepare sputtered ZnO x nanostructured thin film as a near‐field optical active layer to attain ultra‐high density recording.…”