Yttrium oxide film for protecting quartz glass surface from etching by long-term exposure to chlorine trifluoride gas at room temperature

Kawasaki, Ryohei; Umetsu, Y.; Kurashima, Keisuke; Shioda, Kohei; Hirooka, Asumi; Habuka, Hitoshi

doi:10.1016/j.mssp.2018.04.043

Cited by 5 publications

(1 citation statement)

References 13 publications

(15 reference statements)

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“…For this purpose, yttrium oxide has been evaluated in a previous study. 15 The other widely used coating materials, such as tantalum carbide, 16 silicon nitride 17,18 and aluminum nitride, 19 should also be evaluated.…”

mentioning

confidence: 99%

Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine Trifluoride Gas

Haruguchi

Kawasaki

Habuka

et al. 2019

ECS J. Solid State Sci. Technol.

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Widely used coating materials, such as tantalum carbide, silicon nitride and aluminum nitride, were exposed to chlorine trifluoride gas at various temperatures. The tantalum carbide powder was etched and vaporized by a quick and significant exothermic chemical reaction at temperatures higher than room temperature. The silicon nitride powder was etched that produced volatile products at temperatures higher than 250°C. An aluminum nitride plate and powder showed a slight increase in weight at temperatures higher than 500°C due to fluorination. The aluminum nitride plate thickness increased causing a surface smoothing effect without any cracking. The aluminum nitride is expected to work as the anticorrosive coating material to the chlorine fluoride gas at high temperatures, thus allowing fluorination.

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mentioning

confidence: 99%

Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine Trifluoride Gas

Haruguchi

Kawasaki

Habuka

et al. 2019

ECS J. Solid State Sci. Technol.

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Study on Structural and Thermal Characteristics of Heteroleptic Yttrium Complexes as Potential Precursors for Vapor Phase Deposition

et al. 2020

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Yttrium oxide (Y2O3) thin films are implemented as a functional component in a broad field of applications such as optics, electronics or thermal barrier coatings. Atomic layer deposition (ALD) is a promising technique to fabricate high‐quality thin films with atomic level precision in which the precursor choice plays a crucial role in process development. The limited number of suitable yttrium precursors available for ALD of Y2O3 has triggered increasing research activity seeking new or modified precursors. In this study, heteroleptic compounds of yttrium bearing the cyclopentadienyl (Cp) ligand in combination with the chelating amidinate or guanidinate ligands were targeted as potential precursors for ALD. In this context, a systematic and comparative study of the structure and thermal characteristics of (bis‐cyclopentadienyl‐(N,N'‐diisopropyl‐2‐methyl‐amidinato)yttrium) [YCp2(dpamd)] 1 and (bis‐cyclopentadienyl‐(N,N'‐diisopropyl‐2‐dimethylamido‐guanidinato)yttrium) [YCp2(dpdmg)] 2 was performed. Complementary characterization tools such as 1H‐NMR, elemental analysis, electron‐impact mass spectrometry (EI‐MS) and single‐crystal X‐ray diffraction (XRD) confirmed the spectroscopic purity and the monomeric nature of the metalorganic compounds. Hirshfeld surface analysis revealed influence of the ligand choice on the intermolecular interactions of the compounds. The important figures of merit for a precursor, namely the thermal properties were investigated via thermogravimetric analysis. Thus, the volatility, transport behavior and thermal stability were examined and compared to their homoleptic counterparts [YCp3], [Y(dpamd)3] or [Y(dpdmg)3].

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Impedance spectroscopy and DFT/TD-DFT studies of diyttrium trioxide for optoelectronic fields

Alkathiri

Atta

Refat

et al. 2023

Journal of Rare Earths

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Yttrium oxide film for protecting quartz glass surface from etching by long-term exposure to chlorine trifluoride gas at room temperature

Cited by 5 publications

References 13 publications

Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine Trifluoride Gas

Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine Trifluoride Gas

Study on Structural and Thermal Characteristics of Heteroleptic Yttrium Complexes as Potential Precursors for Vapor Phase Deposition

Impedance spectroscopy and DFT/TD-DFT studies of diyttrium trioxide for optoelectronic fields

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