Young’s modulus of ZnO nanobelts measured using atomic force microscopy and nanoindentation techniques

Ni, Hai; Li, Xiaodong

doi:10.1088/0957-4484/17/14/039

Cited by 174 publications

(140 citation statements)

References 32 publications

(45 reference statements)

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“…Previous studies yielded a wide spread of modulus values between 30 and 160 GPa, without a clear dependence on their thickness t, width w, or surface-to-volume ratio. [13][14][15][16] Molecular dynamics simulations showed a noticeable size dependence of the elastic properties only for ZnO nanobelts with lateral dimensions below 4 nm, for which the effects of surface stresses become significant. 17 In this letter, the elastic properties of ZnO nanobelts are investigated with an AFM by means of the modulated nanoindentation technique.…”

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confidence: 99%

Aspect Ratio Dependence of the Elastic Properties of ZnO Nanobelts

et al. 2007

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The Young's modulus of ZnO nanobelts was measured with an atomic force microscope by means of the modulated nanoindentation method. The elastic modulus was found to depend strongly on the width-to-thickness ratio of the nanobelt, decreasing from about 100 to 10 GPa, as the width-to-thickness ratio increases from 1.2 to 10.3. This surprising behavior is explained by a growth-direction-dependent aspect ratio and the presence of stacking faults in nanobelts growing along particular directions.

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confidence: 99%

Aspect Ratio Dependence of the Elastic Properties of ZnO Nanobelts

et al. 2007

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“…It is very clear that the elastic modulus for both amorphous and crystalline boron nanobelts are much lower (4 times) than that of counterpart bulk materials, which is 380~400 GPa [4,5]. The low elastic modulus, as compared to the counterpart bulk materials, was also observed in other 1D nanomaterials, such as ZnO [18,20], ZnS [34] and GaN [22]. As shown in Fig.…”

Section: Resultsmentioning

confidence: 93%

“…5b also shows that for both types of belts there is almost negligible amount of creep (less than 2 nm) generated during the holding segment of 4 seconds at the peak indentation. This phenomenon indicates that both amorphous and crystalline boron nanobelts have better room temperature creep resistant than ZnS and ZnO nanomaterial systems [33,18] and hence may work as excellent nanobuilding blocks and interconnects, where room temperature creep is critical. For all nanoindentation tests, the maximum indentation depth was strictly controlled to about 30% of the thickness of each studied nanobelt.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, to grow boron nanowires is a prerequisite in order to obtain superconducting MgB 2 nanowires [7]. As compared with other 1D nanomaterial systems, such as carbon [16,17], ZnO [18][19][20][21] and GaN [22][23][24], physical properties of 1D boron nanomaterials and especially their mechanical properties have rarely been studied. In order to integrate 1D boron nanomaterials into functional nanodevices, their mechanical properties and structural integrity are of paramount importance.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis, Structural and Mechanical Characterization of Amorphous and Crystalline Boron Nanobelts

2008

JNanoR

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Abstract. Amorphous and crystalline (rhombohedral structure with [111] growth direction) boron nanobelts were synthesized by the vapor-liquid-solid technique. Their structure and chemical compositions were studied by various electron and atomic force microscopy techniques. Most amorphous and crystalline belts have a width to thickness ratio of 2 and are covered with a layer of amorphous silicon oxide. The crystalline belt cores are defect-free single crystals. Gold catalyst thickness and synthesis temperature are the two prominent parameters determining structure of the synthesized nanobelts. The elastic modulus and hardness were measured using nanoindentation and atomic force microscopy three-point bending techniques. The indentation elastic modulus and hardness were measured to be 92.8±4.5 GPa and 8.4±0.6 GPa for amorphous belts, and 72.7±3.9 GPa and 6.8±0.6 GPa for crystalline ones, respectively. The three-point bending elastic moduli were found to be 87.8±3.5 GPa and 72.2±2.4 GPa for amorphous and crystalline, respectively. The measured mechanical properties are 4-5 times lower than those of the counterpart bulk materials.

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“…The two methods yielded very similar results which confirmed that there was no slippage occurring at the two welded ends of the nanowire. This validation of fixed-fixed boundary conditions was critical to unambiguously characterize the elastic response of ZnO nanowires, as earlier studies revealed scattered values for elastic modulus ranging from 20 GPa to 250 GPa with no consensus on the value for a given characteristic size [5,[11][12][13][14]. Stress-strain curves for different nanowires were obtained and analyzed in terms of their elastic modulus and fracture strength.…”

Section: -P2 14th International Conference On Experimental Mechmentioning

confidence: 99%

Failure mechanisms and electromechanical coupling in semiconducting nanowires

Espinosa

Agrawal

Peng

et al. 2010

EPJ Web of Conferences

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Abstract. One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO) and gallium nitride (GaN), have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride. In situ testing of nanostructuresSemiconducting nanowires (NWs) are potential building blocks for future electronic devices like logic circuits, transistors, and solar cells. NWs made of materials like zinc oxide (ZnO) and gallium nitride (GaN) are interesting for the research community due to their piezoelectric behaviour, offered by the non-symmetric wurtzite crystal structure. For example, ZnO NWs has been conceptually shown to generate electrical output when mechanically deformed [1][2][3]. To optimize the potential performance of piezoelectric NW-based devices, characterization of individual NWs at the component level is crucial. In this paper, a microelectromechanical system (MEMS)-based a e-mail : espinosa@northwestern.edu, b Currently an associate professor in the

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Young’s modulus of ZnO nanobelts measured using atomic force microscopy and nanoindentation techniques

Cited by 174 publications

References 32 publications

Aspect Ratio Dependence of the Elastic Properties of ZnO Nanobelts

Aspect Ratio Dependence of the Elastic Properties of ZnO Nanobelts

Synthesis, Structural and Mechanical Characterization of Amorphous and Crystalline Boron Nanobelts

Failure mechanisms and electromechanical coupling in semiconducting nanowires

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