Yellow light emission from Ta 2 O 5 :Er, Eu, Ce thin films deposited using a simple co-sputtering method

Miura, Kenichiro; Osawa, Takumi; Suzuki, Tetsuhito; Yokota, Yoshiyuki; Hanaizumi, Osamu

doi:10.1016/j.rinp.2014.11.003

Cited by 11 publications

(7 citation statements)

References 14 publications

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“…Furthermore, in our recent works, we demonstrated Tm and Ce co-doped Ta 2 O 5 (Ta 2 O 5 :Tm, Ce) [8], Er and Ce co-doped Ta 2 O 5 (Ta 2 O 5 :Er, Ce) [9], and Er, Eu, and Ce co-doped Ta 2 O 5 (Ta 2 O 5 :Er, Eu, Ce) [10] thin films prepared using the co-sputtering method. In this work, we fabricated an Er and Yb co-doped Ta 2 O 5 (Ta 2 O 5 :Er, Yb) thin film using radio-frequency (RF) magnetron co-sputtering of Ta 2 O 5 , Er 2 O 3 , and Yb 2 O 3 for the first time, and evaluated its PL property.…”

Section: Introductionmentioning

confidence: 79%

Fabrication of Erbium and Ytterbium Co-Doped Tantalum-Oxide Thin Films Using Radio-Frequency Co-Sputtering

Miura¹,

Arai²,

Kano³

et al. 2015

MSA

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An erbium and ytterbium co-doped tantalum-oxide (Ta2O5:Er, Yb) thin film was fabricated using a simple co-sputtering method for the first time, and its photoluminescence (PL) spectrum was evaluated. Energy transfers between Er 3+ and Yb 3+ in the Ta2O5:Er, Yb co-sputtered thin film were discussed by comparing between PL spectra of the Ta2O5:Er, Yb film and Ta2O5:Er or Ta2O5:Yb films reported in our previous works. Such a Ta2O5:Er, Yb co-sputtered film can be used as a high-refractive-index and light-emitting material of a multilayered photonic crystal that can be applied to a novel light-emitting device, and it will also be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.

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Section: Introductionmentioning

confidence: 79%

Fabrication of Erbium and Ytterbium Co-Doped Tantalum-Oxide Thin Films Using Radio-Frequency Co-Sputtering

Miura¹,

Arai²,

Kano³

et al. 2015

MSA

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“…We have reported on various rare-earth (Er, Eu, Tm, Y, and Ce) doping into Ta 2 O 5 thin films using simply co-sputtering of rare-earth-oxide (Er 2 O 3 , Eu 2 O 3 , Tm 2 O 3 , Y 2 O 3 , and CeO 2 ) pellets and a Ta 2 O 5 disc [6][7][8][9][10][11]. Moreover, in our recent study, we fabricated Er, Eu, and Ce co-doped Ta 2 O 5 (Ta 2 O 5 :Er, Eu, Ce) thin films using the same co-sputtering method, and observed yellow PL from the films [11]. The yellow light emission seemed to be obtained from the result of enhancement of the 550-nm (green) PL peak due to Er 3+ by Ce doping [12].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and evaluation of green-light emitting Ta 2 O 5 :Er, Ce co-sputtered thin films

et al. 2015

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a b s t r a c tErbium and cerium co-doped tantalum-oxide (Ta 2 O 5 :Er, Ce) thin films were fabricated using radio-frequency co-sputtering of Ta 2 O 5 , Er 2 O 3 , and CeO 2 for the first time. Enhanced green-light emission due to Er 3+ that seems to be sensitized by Ce 3+ was observed from the film annealed at 900°C for 20 min. From XRD measurements of the films, the b-Ta 2 O 5 (orthorhombic), d-Ta 2 O 5 (hexagonal), and (2 0 1) Ta 2 O 5 phases seem to be very important for obtaining green PL from them. Such Ta 2 O 5 :Er, Ce co-sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel green-light-emitting devices, and they will also be used as multi-functional coating films that can work both as anti-reflection and down-conversion films for realizing high-efficiency silicon solar cells.

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“…We reported on red or orange PL from europium (Eu)-doped Ta 2 O 5 (Ta 2 O 5 : Eu) thin films deposited using the same co-sputtering method [9]. In our recent study, we fabricated erbium (Er), Eu, and cerium (Ce) co-doped Ta 2 O 5 (Ta 2 O 5 : Er, Eu, Ce) thin films using co-sputtering of Er 2 O 3 , Eu 2 O 3 , CeO 2 and Ta 2 O 5 , and observed yellow PL from a film annealed at 900˚C [10]. The yellow light emission seemed to be obtained from the result of enhancement of the 550-nm (green) PL peak due to Er 3+ by Ce 3+ doping [12].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Properties of Europium and Cerium Co-Doped Tantalum-Oxide Thin Films Prepared Using Co-Sputtering Method

Miura

Suzuki²,

Hanaizumi³

2015

MSCE

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We fabricated europium and cerium co-doped tantalum (V) oxide (Ta2O5: Eu, Ce) thin films using our co-sputtering method for the first time, and evaluated photoluminescence (PL) properties of the films after annealing at 600˚C-1100˚C for 20 min. Four remarkable PL peaks at wavelengths of 600, 620, 700, and 705 nm were observed from the film annealed at 900˚C. The intensities of the 700-and 705-nm peaks due to the 5 D0 → 7 F4 transition of Eu 3+ were much stronger than those of the 600-nm (5 D0 → 7 F1) and 620-nm (5 D0 → 7 F2) peaks of the film annealed at 900˚C. It seems that energy transfer from Ce 3+ to Eu 3+ occurs in the film, and much energy is selectively used for the 5 D0 → 7 F4 and 5 D0 → 7 F1 transitions. Such a Ta2O5: Eu, Ce co-sputtered thin film seems to be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.

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Yellow light emission from Ta 2 O 5 :Er, Eu, Ce thin films deposited using a simple co-sputtering method

Cited by 11 publications

References 14 publications

Fabrication of Erbium and Ytterbium Co-Doped Tantalum-Oxide Thin Films Using Radio-Frequency Co-Sputtering

Fabrication of Erbium and Ytterbium Co-Doped Tantalum-Oxide Thin Films Using Radio-Frequency Co-Sputtering

Fabrication and evaluation of green-light emitting Ta 2 O 5 :Er, Ce co-sputtered thin films

Photoluminescence Properties of Europium and Cerium Co-Doped Tantalum-Oxide Thin Films Prepared Using Co-Sputtering Method

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