YBa2Cu3O7 thin films grown on sapphire with epitaxial yttria-stabilized zirconia buffer layers

Abstract

Epitaxial yttria-stabilized zirconia (YSZ) buffer layers were grown successfully on sapphire (112̄0) substrates by using rf magnetron sputtering method. The films were cubic in structure with their (100) orientation normal to the substrate surface. YBa2Cu3O7 thin films were deposited on the YSZ/sapphire substrates by the in situ dc magnetron sputtering method. X-ray diffraction analysis showed they were highly c-axis oriented with the zero resistance temperature TCO=92 K and critical current density Jc=1.6×106 A/cm2 at 77 K.

First-principles characterization of a heteroceramic interface:ZrO2(001)deposited on anα−Christensen1, Carter2 2000Phys. Rev. B663291View full textAdd to dashboardCite

“…This epitaxial system is also used as a substrate for ceramic high-T c superconductors, where the zirconia film acts as a chemical buffer layer. [16][17][18] On the ␣-Al 2 O 3 (11 02) substrate, m-ZrO 2 (001) 16,19 and YSZ͑001͒ 16,19,17 have been observed to grow. However, at high oxygen pressure 16 22 studied growth of dense ZrO 2 /Al 2 O 3 nanolaminate structures.…”

Third-order nonlinear optical susceptibility of crystalline oxide yttria-stabilized zirconia

“…Among the crystalline oxides, Yttria-Stabilized Zirconia (YSZ) is known for its role as a buffer layer for the integration of LiNbO 3 , PbTiO 3 , Pb(Zr, Ti)O 3 and YBa 2 Cu 3 O 7 thin films on silicon [11][12][13][14] and as a solid electrolyte due to its high ionic conductivity. [15] In addition, YSZ exhibits extraordinary thermal, mechanical and chemical stability [16][17][18] as well as high refractive index about 2.15 in telecom wavelength range and a wide transparency window from UV to Mid-IR.…”

A Study on Sc2O3‐Stabilized Zirconia Obtained by MOCVD as a Potential Electrolyte for Solid Oxide Fuel Cells

“…Several techniques are available for the deposition of stabilized zirconia electrolytes, even if for some of these (conventional CVD, PVD) it is difficult to deposit crack‐free and uniform films onto porous substrates 19. In this regard, MOCVD is a process that enables thin, crack‐free, and dense films to be obtained under generally mild conditions (temperature, pressure) with respect to other techniques (e.g., sputtering,20 electrochemical vapor deposition,21 etc.). Moreover, in confirmation of this efficiency, a number of examples have been reported in the literature concerning YSZ film depositions by MOCVD 22, 23.…”