Y2O3 thin films: internal stress and microstructure

Gaboriaud, R.J.; Paumier, F.; Pailloux, F.; Guérin, Ph.

doi:10.1016/j.mseb.2003.10.023

Cited by 55 publications

(25 citation statements)

References 13 publications

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“…Namely, the introduction of oxygen vacancies leads to the distortion of YO 6 octahedra in the structure of c-Y 2 O 3 [33]. The observed increase of microstrain caused by only 1 min milling ( Table 2) [36]. The elimination of oxygen vacancies in m-Y2O3 influences cation coordination polyhedra, leading to the change of crystal field, and thus causing the disappearance of Stark splitting of Er 3+ 4f orbitals with relevant electron transitions responsible for luminescence.…”

Section: Tablementioning

confidence: 95%

“…4) depends on the creation of defects and so the oxygen vacancies. Studies on Y 2 O 3 thin film established that there is a significant influence of oxygen vacancies to the structure and thus electronic properties of Y2O3 [27,[33][34][35][36]. Namely, the introduction of oxygen vacancies leads to the distortion of YO 6 octahedra in the structure of c-Y 2 O 3 [33].…”

Section: Tablementioning

confidence: 99%

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Influence of mechanochemical processing to luminescence properties in Y2O3 powder

Gajović

Tomašić

Djerdj

et al. 2008

Journal of Alloys and Compounds

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In high purity Y 2 O 3 powders presence of small amount of erbium ions in cation sites was identified due to the luminescence bands observed by Raman spectrometer. The decrease of the luminescence intensity during high-energy ball-milling was explained. The mechanochemical processing induced the changes of Y 2 O 3 microstructure introducing distortion of the crystal lattice and oxygen vacancies in the cubic phase, substitution of tungsten at the cation sites in c-Y 2 O 3 , and incomplete phase transition of Y 2 O 3 from the cubic to the monoclinic structure. The influence of the particle-size decrease, caused by ball-milling, to luminescence was also considered.Keywords: Oxide materials; Mechanochemical processing; Microstructure; Luminescence IntroductionYttrium sesquioxide (Y 2 O 3 ) ceramics have been intensively investigated for different technological purposes. For decades yttrium oxide has been an important material in ceramic industry, from constituent of ceramic superconductors [1,2], to wellknown YSZ ceramics [3,4]. Y 2 O 3 is also used in electronic applications as a part of metal-oxide-semiconductor heterostructures in MOS transistors [5][6][7][8]. It also plays an important role in preparation of novel light-emitting materials. Y 2 O3 is used as a refractory matrix in rare earth ion doped laser materials [9]. It is selected as a host because of favorable thermomechanical properties (high melting point, phase stability, low thermal expansion). A very good substitution of dopants is insured by similar crystal-chemical constraints for rare earth ions and yttrium [9,10]. Y 2 O 3 structure corresponds to the C-type cubic bixbyite structure, space group Ia3 [11,12] with 16 formula units in the elementary cell. There are 32 cation (six-fold coordinated) sites available for substitution of lanthanide ions: eight are centrosymmetric with C3i symmetry and 24 noncentrosymmetric with C 2 symmetry (Fig. 1a). The sites with C 3i symmetry have a smaller crystal field, so Stark splitting of 4f orbital is smaller [13]. Moreover, since C 3i site has an inversion center, the selection rules forbid the electron-dipole (ED) transitions, but thermal fluctuations of Y 2 O 3 lattice destroy the perfect C 3i symmetry locally [14], and the ED transitions can occur. There is no center of inversion in the C 2 site and the luminescence of incorporated lanthanide ions is predominantly connected with this site. At the pressure of 10-13 GPa cubic Y 2 O 3 exhibits the first-order reconstructive (irreversible) phase transition [15] to monoclinic structure, space group C2/m [16]. Monoclinic structure has 6 Y 2 O 3 formula units in the elementary cell with 3 nonequivalent cation sites (seven-fold coordinated) and Cs symmetry (Fig. 1b). Bihari et. al [17] observed three sets of luminescence lines in doped monoclinic Y 2 O 3 , which correspond to three nonequivalent cation sites. In this work the luminescence bands was observed in high purity Y 2 O 3 (99.99%). The origin of the luminescence bands was identified and their propert...

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Section: Tablementioning

confidence: 95%

Section: Tablementioning

confidence: 99%

Influence of mechanochemical processing to luminescence properties in Y2O3 powder

Gajović

Tomašić

Djerdj

et al. 2008

Journal of Alloys and Compounds

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“…Until now, many researchers have studied the properties of TaNO thin films [1][2][3][4][5]. Their application for thin film resistors is restricted because their resistivity changes suddenly when the nitrogen partial pressure is increased, and because TaNO thin films have a variety of crystal structures.…”

Section: Introductionmentioning

confidence: 99%

Chemical Reaction on Etched TaNO Thin Film as O₂ Content Varies in CF₄/Ar Gas Mixing Plasma

Woo¹,

KimChangIl²

2017

Transactions on Electrical and Electronic Materials

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The TaNO thin films were fabricated on standard 8 inch silicon wafers with a resistivity of 15 ~ 25 Ohm·cm. The TaNO thin film produced by the oxidation of deposited TaN films at 400℃ had a Vol. 18, No. 2, pp. 74-77, April 25, 2017 pISSN: 1229-7607 eISSN: 2092 Jong Chang Woo TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS Department of Electronic Automation Engineering, Daeduk University, Daejeon 34111, KoreaChang-Il Kim School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaReceived September 20, 2016; Accepted November 22, 2016In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to SiO 2 in an O 2 /CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O 2 /CF 4 /Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CF 4 -containing plasmas.

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“…15 However, the crystallized structure can be advantageous to other applications such as replacing SiO 2 for high k gate dielectric layers. 16 Another area of interest for rare earth doped materials is the ability to convert from infrared to visible wavelengths using an upconversion process. Upconversion presents an interesting route to produce visible lasers based on rare earth transitions pumped directly by cheap infra-red semiconductor lasers.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of yttrium oxide thin films for planar waveguiding applications

Pearce

Parker

Charlton

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Thin films of yttrium oxide, Y2O3, were deposited by reactive sputtering and reactive evaporation to determine their suitability as a host for a rare earth doped planar waveguide upconversion laser. The optical properties, structure, and crystalline phase of the films were found to be dependent on the deposition method and process parameters. X-ray diffraction analysis on the “as-deposited” thin films revealed that the films vary from amorphous to highly crystalline with a small broad peak at 29° corresponding to the ⟨222⟩ reflections of Y2O3. The samples with the polycrystalline structure had a stoichiometry close to bulk cubic Y2O3. Scanning electron microscopy imaging revealed a regular column structure confirming their crystalline nature. The thin film layers which allowed guiding in both visible and infrared regions had lower refractive indices, higher oxygen content, and a more amorphous structure. Higher oxygen pressures during the deposition lead to a more amorphous layer.

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Y2O3 thin films: internal stress and microstructure

Cited by 55 publications

References 13 publications

Influence of mechanochemical processing to luminescence properties in Y2O3 powder

Influence of mechanochemical processing to luminescence properties in Y2O3 powder

Chemical Reaction on Etched TaNO Thin Film as O₂ Content Varies in CF₄/Ar Gas Mixing Plasma

Structural and optical properties of yttrium oxide thin films for planar waveguiding applications

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Y2O3 thin films: internal stress and microstructure

Cited by 55 publications

References 13 publications

Influence of mechanochemical processing to luminescence properties in Y2O3 powder

Influence of mechanochemical processing to luminescence properties in Y2O3 powder

Chemical Reaction on Etched TaNO Thin Film as O2 Content Varies in CF4/Ar Gas Mixing Plasma

Structural and optical properties of yttrium oxide thin films for planar waveguiding applications

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Chemical Reaction on Etched TaNO Thin Film as O₂ Content Varies in CF₄/Ar Gas Mixing Plasma