Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

Effect of power variation on wettability and optical properties of co-sputtered titanium and zirconium oxynitride films

“…Manifacier et al (1976) had proposed a model to calculate the refractive index of deposited films from the transmission spectra which is discussed in detail elsewhere (Chawla et al 2008). The film packing density can be determined using the expression of Bragg and Pippard model (Harris et al 1979;Xiao et al 2009). The variation of refractive index with film packing density is shown in figure 5.…”

Microstructure and dielectric properties of La2O3 films prepared by ion beam assistant electron-beam evaporation

“…Ultrathin La 2 O 3 gate dielectric films were prepared on Si substrate using La(tmhd) 3 source by low pressure metalorganic chemical vapor deposition [12]. However, up till now, the growth of lanthanum oxide on Si substrates by ion beam assistant electron-beam evaporation serving as gate dielectrics has seldom been reported Comparing with other thin film depositing methods, the electron-beam evaporation method is a very attractive process for the production of thin and thick coatings on large and complex shaped substrates due to the low cost of equipment and a high deposition rate [13]. Recently, the ion beam assistant technique has been widely used in the electron-beam evaporation.…”

Evolution of Residual Stress and Structure in YSZ/SiO2Multilayers with Different Modulation Ratios

“…The lattice microstrain is the positive value and also indicates that the lattice microstrain in YSZ thin films is tensile in all the films, which agrees with monolayer YSZ stress reported earlier. [15,16] The total stress in an ML film derives from the stresses of the individual layers that comprise the ML and from any interfacial stresses between films. The value of stress 𝜎 in the periodic MLs consisting of alternating layers of material 𝐴 and 𝐵 can be expressed as [21] 𝜎 = (…”