Y-Ba-Cu-O Thin Film on Si Substrate

Abstract

Superconducting Y-Ba-Cu-O thin films have been prepared by RF magnetron sputtering on Si(100) substrate with a buffer layer of ZrO2 or MgO. The film with a ZrO2 buffer layer exhibited a superconductive transition with zero resistance at 82 K. X-ray diffraction patterns indicated a preferential orientation where c-axes were perpendicular to the substrate.

Synthesis and Structural Characterization of a Novel Magnesium β‐Diketonatoalkoxide Complex: A New Precursor for the MOCVD of MgO

“…Magnesium oxide, MgO, has applications as a buffer layer for YBa 2 Cu 3 O x superconducting thin films, [1] and is a component of the ferroelectric relaxor material Pb(Mg,Nb)O 3 , which has significant potential in uncooled thermal imaging devices. [2] Although thin films of MgO have been deposited by radio frequency (RF) magnetron sputtering, [1] metal±or-ganic (MO) CVD is a more attractive technique for microelectronics applications as it offers the potential for large area growth, good film uniformity, and excellent conformal step coverage at device dimensions less than 2 mm.…”

“…[2] Although thin films of MgO have been deposited by radio frequency (RF) magnetron sputtering, [1] metal±or-ganic (MO) CVD is a more attractive technique for microelectronics applications as it offers the potential for large area growth, good film uniformity, and excellent conformal step coverage at device dimensions less than 2 mm. The majority of studies [3±7] into the CVD of MgO have utilized the conventional precursor Mg(thd) 2 (thd = 2,2,6,6-tetramethylheptane-3,5-dionate).…”

Electrical and optical properties of MgO thin film prepared by sol-gel technique

“…Recently, MgO thin films have been increasely noted for their potential advantages as a chemically stable buffer layer for high temperature superconductor applications [8][9][10][11]. The buffer layer acts as a diffusion barrier between the superconducting film and the substrate at the annealing or grain-growth temperature [12][13][14][15]. In addition, the application of MgO films to artificial ceramic superlattices was also reported [161.…”

The influence of epitaxial Ti buffer layers for fabricating as-grown films

“…The application requires high-quality films. Recently, we succeeded to grow as-grown MgB 2 films on Ti buffer layers by using a molecular beam epitaxy (MBE) apparatus [2]. The film quality is remarkably improved by the insertion of Ti buffer.…”

“…The fabrication procedures for the asgrown MgB 2 films by MBE have been described elsewhere in detail [2]. The film thickness was fixed at 300 nm.…”