XRD vs Raman for InGaN/GaN Structures

Abstract

In this study, InGaN/GaN structures are grown by using Metal Organic Chemical Vapor Deposition (MOCVD) technique. Some structural, optical and morphological properties of InGaN/GaN structures are investigated in detail. For structural analysis, X-ray diffraction (XRD), for optical, Raman and morphological, Atomic Force Microscopy (AFM) measurement techniques are used. In XRD analysis both samples presented hexagonal crystal structure. XRD peaks for these two samples showed small differences dependent on growth conditions. Strain and stress values are determined from XRD and they are compared with Raman results. In Raman analysis, five different chemicals are determined in both samples. Raman analysis results are in good accordance with XRD, growth conditions and AFM images. In AFM images, there can be seen hills and holes and they are partly homogeneous. There are also some white regions in AFM images. According to Raman peak center data, these white regions are detected as white rust.

Altın Nano Çubuklar ve Gümüş Nano Parçacıklar Kullanılarak Yüzey İyileştirilmiş Raman Spektroskopisi Yoluyla Saf ve Karışık İdrar Lekelerinin Tanımlanması

“…In recent years, spectroscopic methods have significantly evolved thanks to significant innovations in laser technology [3]. With the development of new light detectors, they have become an essential tool in molecular structure characterization [4].…”

Enhanced Heat Dissipation in Gallium Nitride-Based Light-Emitting Diodes by Piezo-phototronic Effect

“…In order to easily introduce external strain, we carried out the deep silicon etching process (DSiE) to thin the silicon substrate, as shown in Figure 1a. Furthermore, we conducted high-resolution X-ray diffraction (XRD) measurements to characterize the crystal quality of the LED before and after DSiE, 37 and the results are shown in Figure 1b−d. Figure 1b exhibits sharp peaks of GaN 0 th and InGaN 0 th and the periodic satellite peaks (from −2 to +2), which shows smooth interfaces of In 0.16 Ga 0.84 N/GaN multiple quantum well.…”