XPS study of triangular GaN nano/micro-needles grown by MOCVD technique

Kumar, Mukesh; Kumar, Ashish; Thapa, S.B.; Christiansen, Silke; Singh, Rajendra

doi:10.1016/j.mseb.2014.03.010

Cited by 34 publications

(29 citation statements)

References 31 publications

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“…This is in accordance with previous XPS measurements on GaN thin films. 11,13,[35][36][37] After sputter cleaning the film surface, XPS measurements gave an initial overall composition of 25.0 at% Ga, 74.5 at% N, 0.5 at% O with no detectable C. It should be noted that the N 1s peak overlaps with Ga Auger peaks, which results in a broad N 1s peak and an overestimate of the N content. To obtain the Ga/N ratio in the film without Ga Auger interference, the Auger peaks were subtracted from the contribution to the N content.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial GaN using Ga(NMe₂)₃ and NH₃ plasma by atomic layer deposition

et al. 2020

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Section: Resultsmentioning

confidence: 99%

Epitaxial GaN using Ga(NMe₂)₃ and NH₃ plasma by atomic layer deposition

et al. 2020

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“…22 Figure 2(c) shows the O 1s signal from the samples centered at 531.5 eV that corresponds to the C¼O bond of the adsorbed residual atmospheric gases. 23 This XPS signal also shows one shoulder at about 529.8 eV for samples 3-5, which could correspond to the binding energy of Ga-O or Mn-O bonds. 24 Nevertheless, EDS in SEM did not detect an O signal in sample 3.…”

Section: Resultsmentioning

confidence: 84%

Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures

Guzmán

Escudero

Silva

et al. 2018

Journal of Applied Physics

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We present a study of the influence of gallium vacancy (V Ga) point defects on the ferromagnetic properties of GaN:Mn and GaN:Mn,O micro-and nanostructures. Results demonstrate that the generation of these point defects enhances the ferromagnetic signal of GaN:Mn microstructures, while incorporation of oxygen as an impurity inhibits this property. XPS measurements revealed that Mn impurities in ferromagnetic GaN:Mn samples mainly exhibit a valence state of 2þ. Cathodoluminescence (CL) spectra from Mn-doped GaN samples displayed emissions centered at about 1.97 eV, attributed to transitions between the 4 T 1-6A 1 states of the Mn 2þ d orbitals, and emissions centered at 2.45 and 2.9 eV, associated with the presence of V Ga. CL measurements also revealed a blue shift of the GaN band-edge emission generated by the expansion of the wurtzite lattice due to Mn incorporation, which was confirmed by XRD measurements. These latter measurements also revealed an amorphization of GaN:Mn due to the incorporation of oxygen as impurities. The GaN:Mn samples were synthesized by thermal evaporation of GaN and MnCO 3 powders onto Ni 0.8 Cr 0.2 /Si(100) in a horizontal furnace operated at low vacuum. The residual air inside the system was used as a source of oxygen during the synthesis of Mn and O co-doped GaN nanostructures. Mn and O impurities were incorporated into the nanostructures at different concentrations by varying the growth temperature. Energy Dispersive Spectroscopy, XRD, and XPS measurements confirmed that the obtained samples predominantly consisted of GaN.

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“…Ga 3d HR-XPS (Fig. 5a) scan obtained from the bulk of In 0.25 Ga 0.75 N has been deconvoluted into two subpeaks located at 19.82 and 18.67 eV, corresponding to Ga-N [35][36][37] and Ga-Ga 35,37 bonds, respectively. Chang et al 38 reported that Ar + etching has led to rearrangement of In x Ga 1Àx N elemental composition accompanied by the presence of metallic Ga.…”

Section: Resultsmentioning

confidence: 99%

“…The N 1s HR-XPS scan (Fig. 5c) obtained from the bulk of the In 0.25 Ga 0.75 N thin film was fitted using three subpeaks, which were assigned to the N-Ga 35,42 bond (397.0 eV), the N-In 40 bond (397.6 eV), and the Auger Ga 21 peak (395.3 eV). Ga 3d HR-XPS scans ( Fig.…”

Section: Resultsmentioning

confidence: 99%