Epitaxial GaN using Ga(NMe₂)₃ and NH₃ plasma by atomic layer deposition

Abstract

<p>GaN is grown epitaxially on 4H-SiC without buffer layer using ALD with Ga(NMe₂)₃ and NH₃ plasma.</p>

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

“…The stress and strain of the AlN films were estimated using GIXRD data from an − sin 2 plot using a previously reported method, 20 shown in Figure 4b. The positive slope of 6090 ppm indicates a tensile strain of 0.61% and tensile stress was calculated as a range between 1.50 and 1.67 GPa; 13,20 it is expected for tensile strain and stress to exist in these AlN films due to their large lattice mismatch compared to the Si substrate.…”

Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

“…A minor shoulder peak at 20.50.5 eV corresponding to Ga-O bonding 21. The N 1s XPS spectral region shows a dominant peak at 396.60.3 eV, corresponding to N-Ga bonds8 with a shoulder peak at 400.10.4 eV, corresponding to N=C bonding 22. Auger peaks from the Ga region is also observed in the N 1s spectral region.…”

“…One route to circumvent this problem is to use Ga precursors with Ga-N bonds instead of Ga-C bonds, such as Ga(N(CH3)2)3 which has been shown as a promising alternative for ALD of GaN. 8 Another route is to slightly modify the TMG molecule to allow for easier removal of the alkyl ligands. In contrast to TMG, triethylgallium, Ga(C2H5)3 (TEG), can undergo β-hydrogen elimination, a well-known, low-energy path for alkyl ligand removal.…”

Design and development of group 13 precursors for improved vapour deposition of metal nitride thin films

“…Low temperature depositions (100 °C) do not appear to be crystalline. Finally, the stress and strain of the AlN films were estimated using GIXRD data from an − sin � plot using a previously reported method, 244 shown in Figure 6.3b. The positive slope of 6090 ppm indicates a tensile strain of 0.61%.…”

“…Tensile stress was calculated as a range between 1.50 and 1.67 GPa. 243,244 It is expected for tensile strain and stress to exist in these AlN films due their large lattice mismatch compared to the Si substrate. Upcoming work will focus on mobility and charge carrier measurements by depositing AlN on semiconducting SiC.…”