XPS study of the structure of nitrogen doped a-C film

Piliptsou, D.G.; Руденков, А.С.; Рогачев, А. А.; Jiang, Xiaohong; Lychnikov, P A; Emel′yanov, V. A.

doi:10.1088/1757-899x/168/1/012103

Cited by 15 publications

(8 citation statements)

References 12 publications

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“…According to [7,8], the intensity ratio of D-and G-peaks is inversely proportional to the size of the sp 2 clusters: where ID and IG -intensities of the corresponding peaks; La -graphite grain size (nm); c(λ) -the coefficient of proportionality, depending on the wavelength of the exciting radiation (nm). The modes of the formation of coatings have a significant impact on their phase composition, estimated from the analysis of the results of Raman spectroscopy (Table 3).…”

Section: The Results and Their Discussionmentioning

confidence: 99%

The Phase Composition and Structure of Silicon-Carbon Coatings

Руденков

Rogachev

Kupo

et al. 2019

MSF

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The effect of the formation and heat treatment modes of silicon-carbon coatings deposited by ion-beam sputtering of silicon carbide on their morphology, chemical and phase composition is determined. It has been established that an increase in the power of the ion source from 432 W to 738 W leads to a decrease in the sp3/sp2 phase ratio by 1.7 times and an increase in the ratio of Si-C/Si-O bonds by 1.9 times. It is shown that doping of carbon coatings with silicon carbide increases their heat resistance.

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Section: The Results and Their Discussionmentioning

confidence: 99%

The Phase Composition and Structure of Silicon-Carbon Coatings

Руденков

Rogachev

Kupo

et al. 2019

MSF

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“…The C 1s spectrum was decomposed into five components, viz., C1, C2, C3, C4, and C5, located at 284.5, 285.2, 286.4, 287.4, and 288.7 eV, respectively, which were associated with the sp 2 C=C [34], sp 3 C-C [35,36], sp 2 C-N/C=N, sp 3 C-N, and C-OOH bonds [37]. The larger peak area ratio of the C1 component (46.7%), as compared with that of the C2 component (18.29%), indicated that the diamond film contained many nondiamond bonds, which might be attributable to the chemical reaction of the N atom that existed in the CVD chamber because the C2 and C3 bonds with a 29.0% peak area ratio formed between the C atom and N atom and in turn produced several sp 2 C bonds, rather than sp 3 C bonds [38,39]. Here, the peak located at ~283.2 eV (associated with Si-C bond) was not found in the XPS spectrum, suggesting that the amount of Si-C bond was very small in the diamond film [40].…”

Section: Characterization Of Diamond Films With Different Growth Timesmentioning

confidence: 99%

Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate

Yang,

Wang,

Yan

et al. 2023

Materials

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The high-concentration N doping of diamond film is still a challenge since nitrogen is limited during diamond growth. In this work, a novel method combined with the thermal decomposition of silicon nitride was proposed to form the activated N and Si components in the reactor gas that surrounded the substrate, with which the high-concentration N and Si doping of diamond film was performed. Meanwhile, graphene oxide (GO) particles were also employed as an adsorbent to further increase the concentration of the N element in diamond film by capturing the more decomposed N components. All the as-deposited diamond films were characterized by scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be regarded as a potential and alternative method to deposit the chemical vapor deposition (CVD) diamond film with high-concentration N, which be favorable for the widespread application of diamond in the electric field.

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“…Traditionally electron-beam lithography with three-layered resist system PMMA/(PMMA&PMAA, copolymer)/PMAA is used in creation of T-shaped gates. Since that technique is based on the difference in exposure speed of copolymer and PMMA, during the formation of T-shaped gate the size of its pin will be strongly influenced by the exposure time, copolymer thickness and it chemical composition [4][5][6][7][8].…”

Section: Control Of T-shaped Lock Formation Processesmentioning

confidence: 99%

Focused Ion Beam Methods for Research and Control of HEMT Fabrication

Pevtsov

Беспалов

Demenkova

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.

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XPS study of the structure of nitrogen doped a-C film

Cited by 15 publications

References 12 publications

The Phase Composition and Structure of Silicon-Carbon Coatings

The Phase Composition and Structure of Silicon-Carbon Coatings

Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate

Focused Ion Beam Methods for Research and Control of HEMT Fabrication

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