2019
DOI: 10.4028/www.scientific.net/msf.970.283
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The Phase Composition and Structure of Silicon-Carbon Coatings

Abstract: The effect of the formation and heat treatment modes of silicon-carbon coatings deposited by ion-beam sputtering of silicon carbide on their morphology, chemical and phase composition is determined. It has been established that an increase in the power of the ion source from 432 W to 738 W leads to a decrease in the sp3/sp2 phase ratio by 1.7 times and an increase in the ratio of Si-C/Si-O bonds by 1.9 times. It is shown that doping of carbon coatings with silicon carbide increases their heat resistance.

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Cited by 3 publications
(4 citation statements)
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References 14 publications
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“…The highest I D /I G ratio band was observed in the airside of the PDA film (I D /I G = 0.36), indicating a higher level of oxidation, [18] as compared to the waterside of PDA film (I D /I G = 0.32) and the PDA coating (I D /I G = 0.18). In the transfer of 2D and quasi-2D films, such as graphene oxide, the transfer methods might result in a difference in the coverage of the materials onto the same substrate due to the different sp 3 /sp 2 carbon ratio, which changed the intersheet interactions between the film and the substrate [19] As there is a correlation between the I D /I G ratio and the sp 3 /sp 2 carbon ratio, [20] the PDA coating, airside, and waterside of PDA films might interact distinctively with the Si/SiO 2 wafer surface. Furthermore, the chemical difference between the PDA-functionalized surface was characterized by X-ray photoelectron spectroscopy (XPS), which evidenced the gradually increased polymerization levels from the PDA coating, to the waterside of the PDA film, to the airside of the PDA film (Figure S2, Supporting Information).…”
Section: Wwwadvmatinterfacesdementioning
confidence: 99%
“…The highest I D /I G ratio band was observed in the airside of the PDA film (I D /I G = 0.36), indicating a higher level of oxidation, [18] as compared to the waterside of PDA film (I D /I G = 0.32) and the PDA coating (I D /I G = 0.18). In the transfer of 2D and quasi-2D films, such as graphene oxide, the transfer methods might result in a difference in the coverage of the materials onto the same substrate due to the different sp 3 /sp 2 carbon ratio, which changed the intersheet interactions between the film and the substrate [19] As there is a correlation between the I D /I G ratio and the sp 3 /sp 2 carbon ratio, [20] the PDA coating, airside, and waterside of PDA films might interact distinctively with the Si/SiO 2 wafer surface. Furthermore, the chemical difference between the PDA-functionalized surface was characterized by X-ray photoelectron spectroscopy (XPS), which evidenced the gradually increased polymerization levels from the PDA coating, to the waterside of the PDA film, to the airside of the PDA film (Figure S2, Supporting Information).…”
Section: Wwwadvmatinterfacesdementioning
confidence: 99%
“…The detailed analysis of the results of XPS of silicon-carbon coatings formed by ion-beam sputtering of silicon carbide was given by us earlier in the article [8].…”
Section: Coatingmentioning
confidence: 99%
“…The author of [15] mean C-N and С=N bonds by components with a binding energy of 285÷286 eV and 287 eV, respectively, and they compare 288 eV to β-С 3 N 4 . The authors of [16] [8] were identified in the С1s peak of nitrided silicon-carbon coatings (Fig. 1).…”
Section: Coatingmentioning
confidence: 99%
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