2003
DOI: 10.1016/s0925-8388(03)00424-9
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XPS studies of chemically etched surfaces of (La,Sr)(Al,Ta)O3 single crystals

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Cited by 34 publications
(16 citation statements)
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“…The small contributions at lower binding energy for all measured lines may be ascribed to defects near the cone part of the crystal. Similar broadening of the lines to lower binding energy was described for NdGaO 3 and (La,Sr)(Al,Ta)O 3 [11,12]. For the NdGaO 3 crystals all lines even for the broken wafers exhibit low binding energy satellites, whose intensities were dependent on the treatment and decreased significantly after annealing of the crystal.…”
Section: Resultssupporting
confidence: 69%
“…The small contributions at lower binding energy for all measured lines may be ascribed to defects near the cone part of the crystal. Similar broadening of the lines to lower binding energy was described for NdGaO 3 and (La,Sr)(Al,Ta)O 3 [11,12]. For the NdGaO 3 crystals all lines even for the broken wafers exhibit low binding energy satellites, whose intensities were dependent on the treatment and decreased significantly after annealing of the crystal.…”
Section: Resultssupporting
confidence: 69%
“…It indicated that this line was connected with some defects existing in the crystal. Similar behavior of the O 1s line was found for (LaSr)(AlTa)O 3 [4]. The Ga 2p lines exhibited, besides the main line, an additional satellite line at lower binding energy (Fig.…”
Section: Resultssupporting
confidence: 78%
“…The spectra of the next parts are narrower but exhibit also additional lines at lower binding energy (the lowest for the end). These extra lines have much lower intensity and may be ascribed to some defects present in these fragments as was observed for the (La, Sr)(Al, Ta)O 3 crystals (Tables 2 and 3) [12].…”
Section: Electronic Structure Of a Ndgao 3 Crystal Grown Along The [0mentioning
confidence: 60%