XPS investigation of niobium implanted into sapphire after annealing in reducing atmosphere

Huang, N. K.; Tsuchiya, B.; Neubeck, K.; Yamamoto, S.; Narumi, K.; Aoki, Yasushi; Abe, Hiroaki; Miyashita, Atsumi; Ohno, Hideo; Naramoto, H.

doi:10.1016/s0168-583x(98)00406-6

Cited by 11 publications

(4 citation statements)

References 13 publications

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“…It can be seen that the binding energies of Nb 3 d 3/2 and Nb 3 d 5/2 appear at about 210.10 and 207.40 eV for the samples at 0.2-20 Pa, while decreasing to 209.77 and 207.07 eV for 1 × 10 −3 Pa. This result confirms that the Nb ions are presented in +5 state in the SSNO films [ 40 – 42 ]. The slight decrease in binding energies of Nb 3 d signal for the sample prepared under a high vacuum may be due to the changes in the chemical environment around Nb ions.…”

Section: Resultssupporting

confidence: 59%

Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser Deposition

Gao

Zhao

et al. 2020

Nanoscale Res Lett

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Nb-doped SrSnO 3 (SSNO) thin films were epitaxially grown on LaAlO 3 (001) single-crystal substrates using pulsed laser deposition under various oxygen pressures and substrate temperatures. The crystalline structure, electrical, and optical properties of the films were investigated in detail. X-ray diffraction results show that the cell volume of the films reduces gradually with increasing oxygen pressure while preserving the epitaxial characteristic. X-ray photoelectron spectroscopy analysis confirms the Nb 5+ oxidation state in the SSNO films. Hall-effect measurements were performed and the film prepared at 0.2 Pa with the 780 °C substrate temperature exhibits the lowest room-temperature resistivity of 31.3 mΩcm and Hall mobility of 3.31 cm 2 /Vs with a carrier concentration at 6.03 × 10 19 /cm 3 . Temperature-dependent resistivity of this sample displays metal-semiconductor transition and is explained mainly by electron-electron effects. Optical transparency of the films is more than 70% in the wavelength range from 600 to 1800 nm. The band gaps increase from 4.35 to 4.90 eV for the indirect gap and 4.82 to 5.29 eV for the direct by lowering oxygen pressure from 20 to 1 × 10 −3 Pa, which can be interpreted by Burstein-Moss effect and oxygen vacancies generated in the high vacuum.

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Section: Resultssupporting

confidence: 59%

Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser Deposition

Gao

Zhao

et al. 2020

Nanoscale Res Lett

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“…XPS analyses also evidence that the Nb 3d 5 II by comparison with XPS data related to Nb 2 + ions implanted into sapphire. [44] The other peaks (40 %) correspond to NbO 2 , the presence of which is assigned to surface oxidation caused by handling the samples in the air before XPS measurements. After a bombardment of the films by Ar + ions for 15 min, which allows the removal of the surface oxide, the XPS spectrum then clearly shows two peaks (areas ratio: 1.50, as expected) corresponding to the 3d 5/2 (204.6 eV) and 3d 3/2 (207.4 eV) levels of Nb II .…”

Section: Wwwchemeurjorgmentioning

confidence: 99%

Ligand Influence on Connectivity and Processing: Magnetic Crystals Based on Metalloceniums and Films of TCNE‐Based Magnets (TCNE=Tetracyanoethylene)

Faulmann

Valade

2007

Chemistry A European J

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Molecular materials built from coordination complexes exhibit properties that can be explained through intermolecular electronic interactions driven by the ligand moieties. The nature of the ligand in the precursor molecules governs the connectivity of the magnetic phases and the possibility of producing them by using a gas-phase process. Metallocenium, metal bisdithiolate materials, and solvated and solvent-free [M(tcne)2] (tcne=tetracyanoethylene) magnets illustrate such features.

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“…Heavy ion beams are a good candidate of irradiating gemstones, for they are able to bring about both heating effect and introduction of defects, impurities and charges for modification of the optical properties [3], as well as treat individually different gems. In the past ion implantation on sapphires has been investigated from the point of view of improving their optical and mechanical properties [4][5][6][7][8][9] for the application on optics, optoelectronics, photonics and tooling [10,11]. Many studies have dealt with understanding basic and applied aspects of ion beam modifications of sapphire but not many have focussed on developing industry-ready technology.…”

Section: Introductionmentioning

confidence: 99%

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Bootkul

Chaiwai

Tippawan

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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XPS investigation of niobium implanted into sapphire after annealing in reducing atmosphere

Cited by 11 publications

References 13 publications

Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser Deposition

Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser Deposition

Ligand Influence on Connectivity and Processing: Magnetic Crystals Based on Metalloceniums and Films of TCNE‐Based Magnets (TCNE=Tetracyanoethylene)

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

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