XPS and TPD study of Rh/SnO2 system – Reversible process of substrate oxidation and reduction

Barrier heights at the SnO2/Pt interface: In situ photoemission and electrical properties

“…[23]). In particular, the formation of metallic Sn following metal deposition is also observed by Hanyš et al at the SnO 2 /Rh interface [22], consistent with the present observations. The low barrier height of the reduced interface (U B = 0.3-0.4 eV) compares well with low barrier heights and ohmic contact behavior at other reduced oxide/metal interfaces [13][14][15].…”

“…Thus the SnO 2 substrate is reduced at the interface during deposition of Pt. A comparable observation is reported by Hanyš et al during the deposition of Rh onto SnO 2 [22]. The reduction of the SnO 2 substrate is attributed to the release of the heat of condensation of the Pt atoms on the SnO 2 surface [23,24,13].…”

“…After annealing, the metallic component in the Sn 3d 5/2 line has vanished, indicating the oxidation of the metallic Sn. Comparable changes are reported for the SnO 2 /Rh interface [22]. In addition, the Pt 4f level became more asymmetric with an increased intensity on the high binding energy side.…”

Influence of the oxygen pressure on the physical properties of the pulsed-laser deposited Te doped SnO2 thin films

“…Significant oxygen variations induce significant V O variations that can induce a structural stress, causing a reorientation planes of the crystalline lattice. The binding energy of Sn 3d 5/2 peak was E B = 487 eV that corresponds to a fully oxidized Sn +4 state [30]. Also, the binding energy of O 1 s peak was E B = 531 eV that corresponds to O −2 state (see inset in Fig.…”

Disordered surface structure of an ultra-thin tin oxide film on Rh(100)

“…The O 1s spectrum showed a single component at the binding energies of 530.3 eV. Therefore, the tin film was fully oxidized at 500 C. Because the Sn 3d 5/2 peak energy (486.4 eV) was between Sn 4þ and Sn 2þ state (487.1 eV and 486.2 eV, respectively), 24 the two Sn atoms are considered to coordinate with three oxygen atoms, resulting in Sn 3þ state. When the annealing temperature was increased to 600 C, a small peak of the oxygen intermediate state appeared in the O 1s spectrum again.…”