Barrier heights at the SnO2/Pt interface: In situ photoemission and electrical properties

Körber, Christoph; Harvey, Steven P.; Mason, Thomas O.; Klein, Andreas

doi:10.1016/j.susc.2008.08.015

Cited by 54 publications

(59 citation statements)

References 46 publications

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“…The strong dependence of the barrier height on the chemical state of the interface has also been reported by other groups [22,23]. The effect is not restricted to PZT/Pt but also observed at other oxide/metal interfaces [24,25].…”

Section: Introductionsupporting

confidence: 79%

“…As the defects are related to a chemical reduction of the interface, it is likely that these are related to oxygen deficiency. Hence, the lowest defect concentrations are expected for most oxidizing conditions, which consistently leads to a downward shift of the Fermi energy at the interface [16,24,25], corresponding to a lowering of the hole Schottky barrier. The lowest Fermi level position observed at the PZT/Pt interface is E F − E VB = 1.1 eV [16], which is significantly lower than the charge neutrality level calculated by Robertson and Chen [13].…”

Section: Resultsmentioning

confidence: 98%

“…Extrinsic defects can considerably affect the barrier heights [16,24,25,52,53]. It is therefore only reasonable to compare charge neutrality levels with experimental Schottky barrier heights for interfaces with low concentrations of extrinsic defects.…”

Section: Resultsmentioning

confidence: 99%

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Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes

Chen¹,

Schafranek²,

Wu³

et al. 2011

J. Phys. D: Appl. Phys.

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Abstract.The interface formation between Pb(Zr,Ti)O 3 and Pt, Cu and Ag was studied using in situ photoelectron spectroscopy. A strong interface reaction and a reduction of the substrate surface is observed for all three interfaces as evidenced by the appearance of metallic Pb species. Despite the different work function of the metals, nearly identical barrier heights are found with E F − E VB = 1.6 ± 0.1 eV, 1.8 ± 0.1 eV and 1.7 ± 0.1 eV of the as-prepared interfaces with Pt, Cu and Ag, respectively. The barrier heights are characterized by a strong Fermi level pinning, which is attributed to an oxygen deficient interface induced by the chemical reduction of Pb(Zr,Ti)O 3 during metal deposition.

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Section: Introductionsupporting

confidence: 79%

Section: Resultsmentioning

confidence: 98%

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Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes

Chen¹,

Schafranek²,

Wu³

et al. 2011

J. Phys. D: Appl. Phys.

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“…23 Similar Observation have been made for the SnO 2 /Pt interface. 40 Oxidation and reduction of the interface is not likely for RuO 2 electrodes. This is also supported by comparing the results of this work for RuO 2 deposited onto BST to BST deposition onto RuO 2 as done by Jeon et al 19 The same barrier height is observed for both deposition sequences, in contrast to strongly different barrier heights at the as-deposited BST/Pt and Pt/BST interface.…”

Section: Discussionmentioning

confidence: 99%

In situ photoelectron study of the (Ba,Sr)TiO3/RuO2 contact formation

Schafranek

Schaffner

Klein

2010

Journal of the European Ceramic Society

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“…The latter influences the surface band bending and therefore the sensor conductance. [29] These effects require further investigations on dissimilar electrode materials. The methodology presented herein allows for such investigations.…”

mentioning

confidence: 99%

Active Metal Electrode–Oxide Interface in Gas Sensor Operation Probed by In Situ and Time‐Resolved X‐Ray Spectroscopy

Gurlo¹,

Riedel²

2010

ChemPhysChem

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Interface phenomena in multilayer materials have received considerable attention in recent years. Despite their importance, few details are known about their contribution to the overall functional properties of nanotechnological devices. Fundamental knowledge about chemical and electronic processes at interfaces is required to develop better devices as well as to understand the corresponding mechanisms in greater depth. As a part of our overall approach [1,2] towards universal in situ and operando spectroscopic tools, herein we report an in situ high-energy-resolution fluorescence-detected (HERFD) and time-resolved X-ray spectroscopic study of the metal electrode-oxide interface contribution to overall sensing performance. A "universal tool" can be seen here as an in situ and operando cell which enables similar phenomena in different material classes to be studied as well as for different device constructions.Herein, for the first time, the operando methodology is applied to address the chemical and electrical phenomena associated with an active metal electrode-oxide interface in gas sensors based on semiconducting metal oxides, so-called chemiresistors. A chemiresistor is a complex device that consists of several components: the porous sensing layer is deposited on the transducer surface (e.g. Si 3 N 4 , Al 2 O 3 , Si/SiO x ) carrying the electrodes and an integrated heater (Figure 1). The latter helps to achieve the typical sensor operation temperature in the range of 100 to 500 8C. Two metals-usually either Pt or Auelectrodes are fabricated to enable two-point conductance measurements.In the field of metal-oxide-based gas sensors the operando methodology couples electrical and spectroscopic techniques aiming to correlate the sensor activity with the spectroscopic data obtained under the same conditions on the same sample. All these factors determine the boundary conditions under which an "operando" experiment is performed: [1]

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Barrier heights at the SnO2/Pt interface: In situ photoemission and electrical properties

Cited by 54 publications

References 46 publications

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes

In situ photoelectron study of the (Ba,Sr)TiO3/RuO2 contact formation

Active Metal Electrode–Oxide Interface in Gas Sensor Operation Probed by In Situ and Time‐Resolved X‐Ray Spectroscopy

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Barrier heights at the SnO2/Pt interface: In situ photoemission and electrical properties

Cited by 54 publications

References 46 publications

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O3 and Pt, Cu and Ag metal electrodes

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O3 and Pt, Cu and Ag metal electrodes

In situ photoelectron study of the (Ba,Sr)TiO3/RuO2 contact formation

Active Metal Electrode–Oxide Interface in Gas Sensor Operation Probed by In Situ and Time‐Resolved X‐Ray Spectroscopy

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Product

Resources

About

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes