2001
DOI: 10.1016/s0169-4332(00)00826-6
|View full text |Cite
|
Sign up to set email alerts
|

XPS and sputtering study of the Alq3/electrode interfaces in organic light emitting diodes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
29
0

Year Published

2008
2008
2023
2023

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 48 publications
(30 citation statements)
references
References 27 publications
1
29
0
Order By: Relevance
“…189 Nguyen et al was able to measure the content of indium across a complete degraded OLED, consisting of an ITO|Alq 3 (100 nm)| Al stack. 183 Indium atoms are known to quench the luminescence in the active area. This was shown by Lee et al by intentional doping experiments on Alq 3 -emission layers in OLEDs.…”
Section: Diffusion and Driftmentioning
confidence: 99%
See 1 more Smart Citation
“…189 Nguyen et al was able to measure the content of indium across a complete degraded OLED, consisting of an ITO|Alq 3 (100 nm)| Al stack. 183 Indium atoms are known to quench the luminescence in the active area. This was shown by Lee et al by intentional doping experiments on Alq 3 -emission layers in OLEDs.…”
Section: Diffusion and Driftmentioning
confidence: 99%
“…237 Nguyen et al were able to examine the ITO decomposition, where they could show dissolution of In and Sn and a further migration/diffusion into the organic layer from an ITO|Alq 3 hetero stack during device degradation. 183 Such a decomposition of ITO is sometimes accompanied by a volcano or dome-like structure forming at its surface, where In-rich regions are detectable. 448 Another mechanism can be observed for cathode materials.…”
Section: Electrochemical Reactionsmentioning
confidence: 99%
“…This result is consistent with the data published in the literature on an ultra-thin Al film that was thermally evaporated on a polymer surface under similar conditions. [11][12][13] The deconvolution of the Al 2p peak from the HY-PPV/PEGDE25/Al50 surface reveals the presence of two additional peaks -one at 75.4 eV, which corresponds to the oxide species, and the other one at 72.5 eV. The latter peak is at a position that is typically assigned to C-O-Al or C-Al bonds, [11,43,44] supporting the formation of carbide-like species revealed by the C 1s spectra in Figure 3c and d.…”
Section: Full Papermentioning
confidence: 99%
“…[7][8][9] However, the surface of Al, which intrinsically has a very large amount of non-bonding orbitals (dangling bonds) or surface states, is very active, oxidizing immediately when exposed to the atmosphere and tending to react with organic materials during vacuum thermal evaporation. [10,11] Additionally, the release of energy of Al followed by the condensation of metallic vapor on the substrate of organic/polymer film at room temperature breaks chemical bonds. Changes in the polymer configuration affect the overall performance of the devices and have stimulated the interest of many researchers.…”
Section: Introductionmentioning
confidence: 99%
“…[4][5][6] The metal atoms also tend to react with conjugated molecules near the contact interface to break the conjugated length and cause localized defect states. [7][8][9] These largely degrade the device performance and limit the application of organic electronic devices.…”
Section: Introductionmentioning
confidence: 99%