XPS and EELS study of the bismuth selenide

Nascimento, V. B.; Carvalho, V. E. de; Paniago, R.; Soares, E.A.; Ladeira, Luiz Orlando; Pfannes, H.‐D.

doi:10.1016/s0368-2048(99)00012-2

Cited by 79 publications

(69 citation statements)

References 20 publications

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“…11 In our studies, we found the intensity of the spectral features at 7 and 17 eV would increase with increasing sample thickness indicating that both spectral features at 7 and 17 eV were volume excitations. Consequently, the previous interpretation of the spectral feature at ~7 eV as surface-plasmon appears to be incorrect.…”

supporting

confidence: 48%

“…[5][6][7] Consequently, most research activities focus on the studies of conducting surface state and related surface band structure of Bi 2 Se 3 using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations, [5][6][7][8][9] with only few investigations on the intrinsic bulk band structure of Bi 2 Se 3 . [10][11][12][13] Structurally, Bi 2 Se 3 consists of alternating layers of Bi and Se that are arranged along the c axis in five covalent bonded atomic layers with the sequence of Se-Bi-Se-Bi-Se forming a tightly bound quintuple layer (QL), and the QLs are weakly bounded with a van der Waals force. 14,15 This structure clearly reveals highly anisotropic bonding between the lateral (within QLs) and the longitudinal (between the QLs) directions.…”

Section: Introductionmentioning

confidence: 99%

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Plasmons dispersion and nonvertical interband transitions in single crystal Bi2Se3investigated by electron energy-loss spectroscopy

et al. 2013

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Plasmons dispersion and nonvertical interband transitions in Bi 2 Se 3 single crystals were investigated by electron energy-loss spectroscopy in conjunction with (scanning) transmission electron microscopy, (S)TEM-EELS. Both volume plasmons (π plasmon at 7 eV and π+σ plasmon at 17 eV) and surface plasmons (~5.5 and 10 eV) were demonstrated in STEM-EELS spectra and the corresponding spectral imaging in real space. In the further EELS experiments in reciprocal space, the momentum-dependent spectra reveal very different dispersion behavior between π and π+σ plasmons, with π+σ plasmons showing a typical quadratic dependence whereas the π plasmon exhibiting a linear dispersion analogous to what was reported for graphene.Furthermore, a low energy excitation 0.7~1.6 eV was also observed which is attributed to direct nonvertical interband transitions along the F direction.

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confidence: 48%

Section: Introductionmentioning

confidence: 99%

Plasmons dispersion and nonvertical interband transitions in single crystal Bi2Se3investigated by electron energy-loss spectroscopy

et al. 2013

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“…The five layers are arranged as Se(1)-Bi-Se(2)-Bi-Se(1) and form quintuple layers (Hruban et al, 2011). A weak van der Waals force field was found between the planes of Se atoms of two different quintuple layers, which permits the easy cleavage of the crystal along that plane (Choi et al, 2004;Nascimento et al, 1999). There is no literature available that gives an exhaustive description of the bulk single-crystal characterization of crystalline perfection or the nanoindent behavior of the title compound, which is essential knowledge for gauging the suitability of the compound for making thermoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

et al. 2015

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The growth of good quality bulk single crystals of bismuth selenide by employing a high-temperature vertical Bridgman technique with a specially designed ampoule having a provision for a necking process is reported. Several growth experiments were performed and reproducible results were obtained. The crystal structure and lattice dimensions were confirmed by powder X-ray diffraction (PXRD), the bulk crystalline perfection was assessed using highresolution X-ray diffractometry and the good bulk crystalline perfection with an indication of layered structure was confirmed. Transmission electron microscopy (TEM) was carried out for the grown single crystal and confirmed the layered structure. High-resolution TEM (HRTEM) was also used to further assess the crystalline perfection. The direct measurement of d spacing obtained from HRTEM imaging was found to be in good agreement with the data obtained from PXRD. The thermal behavior was examined by differential scanning calorimetry and a sharp melting was found at 983 K, which revealed the purity of the bismuth selenide. The Seebeck coefficient and electrical and thermal conductivities were measured, and a thermoelectric figure of merit was calculated in order to assess the suitability of the crystal for thermoelectric applications such as refrigeration and portable power generation. Nanoindentation analysis was also performed for the first time.

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“…Thin polycrystalline films of Sb 2 Se 3 semiconductors are commonly used as absorber films for the fabrication of cost-effective solar cells and Hall effect devices [4]. Its high thermoelectric power allows possible applications for optical, thermoelectric cooling, and power conversion devices [5].…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of a single Sb2Se3 nanorod

Yang

Sun

et al. 2009

Open Chemistry

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Abstract:In this paper we present the methods to chemically synthesize the Sb 2 Se 3 nanorods and study the electrical and optical properties of a single Sb 2 Se 3 nanorod with an average size of 70 nm in diameter and a length of about 1 mm to 2 mm. The techniques we devised can immobilize and allocate a single nano-object on an electron beam (E-beam) patterned smart substrate. It can also overcome the limitation of the spatial resolution of conventional optical techniques (~ 1 mm) to obtain optical spectroscopy in an individual nano-object less than 100 nm in size. We also demonstrate the techniques in using E-beam defined metallic coordination markers as electrodes to measure the conductance of a single Sb 2 Se 3 nanorod.© Versita Warsaw and Springer-Verlag Berlin Heidelberg.

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XPS and EELS study of the bismuth selenide

Cited by 79 publications

References 20 publications

Plasmons dispersion and nonvertical interband transitions in single crystal Bi2Se3investigated by electron energy-loss spectroscopy

Plasmons dispersion and nonvertical interband transitions in single crystal Bi2Se3investigated by electron energy-loss spectroscopy

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

Electrical and optical properties of a single Sb2Se3 nanorod

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XPS and EELS study of the bismuth selenide

Cited by 79 publications

References 20 publications

Plasmons dispersion and nonvertical interband transitions in single crystal Bi2Se3investigated by electron energy-loss spectroscopy

Plasmons dispersion and nonvertical interband transitions in single crystal Bi2Se3investigated by electron energy-loss spectroscopy

Enhancement of thermoelectric figure of merit in Bi2Se3crystals through a necking process

Electrical and optical properties of a single Sb2Se3 nanorod

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Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process