XPS analysis and characterization of thin films Cu2ZnSnS4 grown using a novel solution based route

Calderón, C.; Gordillo, G.; Becerra, R.A.; Bartolo‐Pérez, P.

doi:10.1016/j.mssp.2015.05.064

Cited by 40 publications

(19 citation statements)

References 16 publications

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“…The average binding energy (BE) values with uncertainties estimated at ~ ±0.01 eV are listed in Table S2, in which the BE values of Cu2p are ~932.30 eV and 952.22 eV, with a peak separation of ~19.90 eV, indicating the presence of Cu + . [27][28][29] The two peaks of the S2p XPS spectra in CTS or base material are ~161.55 eV and ~162.75 eV, with a peak separation of 1.20 eV, which are consistent with the expected values (160−164 eV) of S in sulfide phases. Hence, S 2can be identified.…”

Section: Xpssupporting

confidence: 78%

The role of excess Sn in Cu₄Sn₇S₁₆ for modification of the band structure and a reduction in lattice thermal conductivity

Lin

et al. 2017

J. Mater. Chem. C

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In this work, we have investigated the band structures of ternary Cu4Sn7+xS16 (x = 0–1.0) compounds with an excess of Sn, and examined their thermoelectric (TE) properties. First principles calculations reveal that the excess Sn, which exists as Sn2+ and is preferentially located at the intrinsic Cu vacancies, unpins the Fermi level (Fr) and allows Fr to enter the conduction band (CB) at x = 0.5. Accordingly, the Hall carrier concentration (nH) is enhanced by about two orders of magnitude when the x value increases from x = 0 to x = 0.5. Meanwhile, the lattice thermal conductivity (κL) is reduced significantly to 0.39 W K−1 m−1 at 893 K, which is in reasonably good agreement with the estimation using the Callaway model. As a consequence, the dimensionless TE figure of merit (ZT) of the compound Cu4Sn7+xS16 with x = 0.5 reaches 0.41 at 863 K. This value is double that of the stoichiometric Cu4Sn7S16, proving that excess Sn in Cu4Sn7S16 is beneficial for improving the TE performance

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Section: Xpssupporting

confidence: 78%

The role of excess Sn in Cu₄Sn₇S₁₆ for modification of the band structure and a reduction in lattice thermal conductivity

Lin

et al. 2017

J. Mater. Chem. C

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“…The donor density can be estimated from the slope. The obtained values of the charge carrier concentration for 67% duty cycle, 50% duty cycle, and 33% duty cycle correspondingly are 2.56x10 16 , 2.55x10 16 , and 2.55x10 16 cm -3 which closely reflect reported values in other studies [8,34,[39][40][41][42][43][44][45][46][47][48]. In addition, by the extrapolation of 1/ 2 sc C = 0, the flat band potential values of the films deposited at different duty cycles can be determined.…”

Section: Accepted Manuscriptsupporting

confidence: 86%

Pulsed current co-electrodeposition of kesterite Cu2ZnSnS4 absorber material on fluorinated tin oxide (FTO) glass substrate

Termsaithong

Munprom

Shah

et al. 2018

Surface and Coatings Technology

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The film of kesterite Cu2ZnSnS4 (CZTS) was prepared on a fluorinated tin oxide (FTO) substrate by a galvanostatically pulsed electrodeposition. The effect of duty cycles on electrodeposition was investigated at 33%, 50%, and 67% duty cycle. For the characterization, the prepared films were analyzed by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), x-ray spectroscopy (XRD), UV-vis spectroscopy, Raman spectroscopy, and an atomic emission elemental analyzer. According to the experiments, surface morphologies of the CZT precursor appear to be uniform with fewer pores. After sulfurization, the morphologies of CZTS film become more uniform. When considering duty cycles, a higher duty cycle resulted in the surface being denser, more compact, more uniform, and smoother. Based upon the XRD and EDS, the film's composition consists of copper, zinc, tin, and sulfur. The compound formulae is also proved to be copper zinc tin sulfide.

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“…In an article published previously [13] there were reported results of a study performed using XRD, Raman spectroscopy and XPS (X-ray photoelectron spectroscopy) to thin films of CTS and CZTS deposited by both membrane assisted CBD and sequential evaporation of precursors. The XRD and Raman study revealed that with both methods can be grown samples of CTS containing just the Cu 2 SnS 3 phase and samples of CZTS containing only the Cu 2 ZnSnS 4 phase; it was also reported that the CBD deposited CTS and CZTS films present similar structural properties than those of the sequentially evaporated CTS and CZTS films.…”

Section: Experimental Verification Of the Formation Of The Cu 2 Sns 3mentioning

confidence: 99%

“…XPS depth profile analysis performed to Cu 2 ZnSnS 4 and Cu 2 SnS 3 films (see Ref. [13]) do not revealed the presence of oxygen; nevertheless peaks associated to C1s were also identified.…”

Section: Experimental Verification Of the Formation Of The Cu 2 Sns 3mentioning

confidence: 99%

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Fabrication of solar cells based on Cu₂ZnSnS₄prepared from Cu₂SnS₃synthesized using a novel chemical procedure

et al. 2016

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Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films were fabricated using a chemical route to prepare the CZTS films, consisting in sequential deposition of Cu2SnS3 (CTS) and ZnS thin films followed by annealing at 550 • C in nitrogen atmosphere. The CTS compound was prepared in a one-step process using a novel chemical procedure consisting of simultaneous precipitation of Cu2S and SnS2 performed by diffusion membranes assisted CBD (chemical bath deposition) technique. Diffusion membranes were used to optimize the kinetic growth through a moderate control of release of metal ions into the work solution. As the conditions for the formation in one step of the Cu2SnS3 compound have not yet been reported in literature, special emphasis was put on finding the parameters that allow growing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S and SnS2. For that, we propose a methodology that includes numerical solution of the equilibrium equations that were established through a study of the chemical equilibrium of the system SnCl2, Na3C6H5O7·2H2O, CuCl2 and Na2S2O3·5H2O. The formation of thin films of CTS and CZTS free of secondary phases grown with a stoichiometry close to that corresponding to the Cu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements of X-ray diffraction (XRD) and Raman spectroscopy. Solar cell with an efficiency of 4.2%, short circuit current of 16.2 mA/cm 2 and open-circuit voltage of 0.49 V was obtained.

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XPS analysis and characterization of thin films Cu2ZnSnS4 grown using a novel solution based route

Cited by 40 publications

References 16 publications

The role of excess Sn in Cu₄Sn₇S₁₆ for modification of the band structure and a reduction in lattice thermal conductivity

The role of excess Sn in Cu₄Sn₇S₁₆ for modification of the band structure and a reduction in lattice thermal conductivity

Pulsed current co-electrodeposition of kesterite Cu2ZnSnS4 absorber material on fluorinated tin oxide (FTO) glass substrate

Fabrication of solar cells based on Cu₂ZnSnS₄prepared from Cu₂SnS₃synthesized using a novel chemical procedure

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XPS analysis and characterization of thin films Cu2ZnSnS4 grown using a novel solution based route

Cited by 40 publications

References 16 publications

The role of excess Sn in Cu4Sn7S16 for modification of the band structure and a reduction in lattice thermal conductivity

The role of excess Sn in Cu4Sn7S16 for modification of the band structure and a reduction in lattice thermal conductivity

Pulsed current co-electrodeposition of kesterite Cu2ZnSnS4 absorber material on fluorinated tin oxide (FTO) glass substrate

Fabrication of solar cells based on Cu2ZnSnS4prepared from Cu2SnS3synthesized using a novel chemical procedure

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The role of excess Sn in Cu₄Sn₇S₁₆ for modification of the band structure and a reduction in lattice thermal conductivity

The role of excess Sn in Cu₄Sn₇S₁₆ for modification of the band structure and a reduction in lattice thermal conductivity

Fabrication of solar cells based on Cu₂ZnSnS₄prepared from Cu₂SnS₃synthesized using a novel chemical procedure